BF246A Fairchild Semiconductor, BF246A Datasheet - Page 91

IC AMP RF N-CH 30V TO-92

BF246A

Manufacturer Part Number
BF246A
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of BF246A

Current - Drain (idss) @ Vds (vgs=0)
30mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 100nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 30 V
Drain Current (idss At Vgs=0)
2 mA to 9 mA
Forward Transconductance Gfs (max / Min)
0.008 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
39 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF246A
Manufacturer:
PHILIPS
Quantity:
44
Part Number:
BF246A
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
BF246A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
www.fairchildsemi.com
Bipolar Power Transistors – General Purpose Transistors (Continued)
BD240B
BD240C
KSB546
KSA473
TIP32
BD242
KSA614
BD242A
TIP32A
KSB834
BD242B
TIP32B
BD242C
TIP32C
KSB596
TIP42
BD244
BD244A
TIP42B
BD244B
TIP42C
BD244C
KSB707
KSB708
KSA1010
BD534
BD536
BD538
KSE2955T
MJE2955T
KSE45H
TO-220F NPN Configuration
KSC3296
KSD401
KSD1406
Products
I
C
1.5
10
10
10
2
2
2
3
3
3
3
3
3
3
3
3
3
3
4
6
6
6
6
6
6
6
7
7
7
8
8
8
2
3
(A) V
CEO
100
150
100
100
100
100
100
150
150
80
30
40
45
55
60
60
60
80
80
80
40
45
60
80
80
60
80
45
60
80
60
60
80
60
(V) V
CBO
115
200
115
100
100
100
100
150
200
90
30
40
55
80
70
60
60
90
80
80
40
45
60
80
80
80
80
45
60
80
70
70
60
(V) V
EBO
5
5
5
5
5
5
5
5
5
7
5
5
5
5
5
5
5
5
5
5
5
5
7
7
7
5
5
5
5
5
5
5
5
7
(V) P
C
30
30
25
10
40
40
25
40
40
30
40
40
40
40
30
65
65
65
65
65
65
65
40
40
40
50
50
50
75
75
50
20
25
25
(W)
Min
15
15
40
70
10
10
40
10
10
60
10
10
10
10
40
15
30
30
15
30
15
30
40
40
40
20
20
15
20
20
60
40
40
60
2-86
Discrete Power Products –
Max
240
240
240
200
240
200
200
200
100
100
140
400
300
50
50
50
50
75
75
75
h
FE
@I
0.01
0.01
0.01
0.4
0.5
0.5
0.5
0.5
0.3
0.3
0.3
0.3
0.5
0.4
0.5
C
1
1
3
3
3
3
3
3
3
3
3
3
3
3
3
3
4
4
2
(A) @V
10
10
10
CE
4
2
4
4
5
4
4
4
4
4
4
1
5
5
4
4
4
5
4
4
4
5
4
4
4
1
5
5
4
1
5
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.15
0.3
0.5
0.4
1
0.7
0.7
0.8
1.2
1.2
0.5
1.2
1.2
1.2
1.2
1.2
1.2
1.7
1.5
1.5
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.6
0.8
0.8
0.8
1.1
1.1
1.5
1
1
1
1
1
V
CE (sat)
0.5
0.5
0.5
C
1
1
2
3
3
1
3
3
3
3
3
3
3
3
6
6
6
6
6
6
6
5
5
5
2
2
2
4
4
8
3
(A) @I
0.375
0.375
0.375
0.375
0.05
0.05
0.05
0.2
0.2
0.2
0.6
0.1
0.6
0.3
0.6
0.6
0.3
0.6
0.6
0.6
0.5
0.5
0.5
0.2
0.2
0.2
0.4
0.4
0.4
0.3
B
1
1
1
1
(A)

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