BF246A Fairchild Semiconductor, BF246A Datasheet - Page 115

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
2N5366
2N4402
2N4403
TIS93
MPS6534
PN2907
PN4143
BC307
BC557
BC560
SS9015
KSA539
PN200
PN200A
BCX79
PN3644
BC327
BC636
2N5086
2N5087
BC212B
BC212LB
KSA1015
BC212
BC212L
KSB1116
KSB1116S
KSA733
MPS8598
BC327A
KSP55
MPSA55
PN4249
PN4250A
KSP8598
Products
V
CEO
40
40
40
40
40
40
40
45
45
45
45
45
45
45
45
45
45
45
50
50
50
50
50
50
50
50
50
50
60
60
60
60
60
60
60
(V)
V
CBO
40
40
40
40
40
60
60
50
50
50
50
60
60
60
45
45
50
45
50
50
60
60
50
60
60
60
60
60
60
60
60
60
60
60
60
(V)
V
EBO
4
5
5
5
4
5
5
5
5
5
5
5
6
6
5
5
5
5
3
3
5
5
5
5
5
6
6
5
5
5
4
4
5
5
5
(V)
Max (A)
0.15
150
0.5
0.6
0.6
0.8
0.8
0.8
0.8
0.1
0.1
0.1
0.1
0.2
0.5
0.5
0.5
0.8
0.8
0.1
0.1
0.1
0.1
0.3
0.3
0.5
0.5
0.5
0.5
0.5
I
1
1
1
–
–
C
Min
100
100
100
100
100
120
110
110
100
300
100
100
150
250
135
135
100
100
100
100
250
100
50
90
60
40
80
40
60
60
70
60
60
40
50
2-110
Discrete Power Products –
Max
1000
300
150
300
300
270
300
300
800
800
800
600
240
450
600
300
630
250
500
800
400
300
600
600
700
300
400
300
700
300
–
–
–
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
10
10
10
CE
1
2
2
2
1
5
5
5
5
1
1
1
1
1
2
5
5
5
5
6
5
5
2
2
6
5
1
1
1
5
5
5
(V) @I
C
150
150
100
150
150
150
100
150
100
100
100
0.1
0.1
0.1
0.1
50
50
50
10
10
10
10
10
2
2
2
1
2
2
2
2
2
1
1
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.75
0.75
0.25
0.65
0.65
0.25
0.25
0.25
0.25
0.3
1.6
1.6
0.3
0.7
0.5
0.4
0.4
0.4
0.7
0.5
0.3
0.3
0.6
0.6
0.3
0.6
0.6
0.3
0.3
0.3
0.4
0.7
0.4
1
@I
V
CE (sat)
1000
1000
C
500
500
100
500
500
100
100
100
150
200
200
100
150
500
500
100
100
100
100
100
100
100
500
100
100
100
50
50
10
10
10
10
10
(mA) @I
B
0.5
0.5
2.5
2.5
0.5
50
50
10
50
50
15
20
20
15
50
50
10
50
50
10
10
50
10
10
5
5
5
5
1
1
5
5
5
5
5
(mA)