BF246A Fairchild Semiconductor, BF246A Datasheet - Page 118

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SC70 PNP Configuration
FFB3906
BC857S
FFB2907A
SOIC NPN Configuration
MMPQ2222
MMPQ3904
MMPQ2222A
FTM3725
SOIC NPN/PNP Configuration
MMPQ6700
SOIC PNP Configuration
MMPQ3906
MMPQ2907
MMPQ2907A
SOT-563F PNP Configuration
FJYF2906
SuperSOT NPN Configuration
FMBA14
FMB3904
FMB2222A
FMB100
FMBA06
FMB5551
SuperSOT NPN/PNP Configuration
FMB2227A
FMB3946
Products
V
CEO
160
160
40
40
45
30
40
40
45
60
30
40
40
40
40
40
40
60
40
30
40
40
45
80
30
40
(V)
V
CBO
180
180
60
75
50
60
40
40
50
60
60
60
75
60
40
40
60
60
40
30
60
75
75
80
60
40
(V)
V
EBO
10
6
5
6
6
5
5
5
5
5
5
6
5
6
5
5
5
5
5
6
5
6
4
6
5
5
(V)
Max (A)
0.15
200
0.2
0.2
0.2
0.2
0.6
0.5
0.5
0.6
0.2
0.5
0.1
0.5
0.5
0.5
0.2
0.2
1.2
0.2
0.2
0.6
1.2
0.5
0.5
0.2
I
C
20000
Min
100
100
110
100
100
100
125
100
100
100
100
100
100
100
100
100
100
80
75
75
60
70
75
80
80
2-113
Discrete Power Products –
Max
300
630
300
300
300
300
300
300
450
250
300
250
630
180
300
300
300
300
–
–
–
–
–
–
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
10
10
10
10
10
10
10
10
10
CE
1
5
5
1
1
5
1
1
1
1
1
5
1
1
1
5
1
(V) @I
C
150
150
150
150
100
150
150
100
150
100
150
10
10
10
10
10
10
10
10
10
10
10
10
2
2
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.65
0.25
0.65
0.26
0.25
0.25
0.15
0.25
0.3
1.4
0.4
1.6
0.4
0.3
0.4
1.6
1.6
0.3
1.5
0.3
0.4
1.4
1
1
1
1
@I
V
CE (sat)
C
500
100
300
100
500
150
500
100
300
500
100
500
200
100
300
50
50
10
50
50
10
50
10
50
10
10
(mA) @I
B
0.1
50
30
50
15
50
10
30
50
50
20
10
30
5
5
5
1
5
5
5
1
5
1
5
1
1
(mA)