BF246A Fairchild Semiconductor, BF246A Datasheet - Page 12

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SuperSOT™-3/SOT-23 (Continued)
FDN304PZ
FDN302P
FDN340P
FDN342P
FDN338P
FDN308P
FDN336P
NDS356P
NDS332P
NDS352P
FDN306P
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.052
0.055
0.115
0.125
4.5V
0.07
0.08
0.04
0.2
0.3
Max (Ω) @ V
2-7
0.41@2.7V
0.155
2.5V
0.07
0.08
0.11
0.13
0.19
0.27
0.05
GS
=
Replaced by NDS356AP
Replaced by NDS352AP
Bold = New Products (introduced January 2003 or later)
1.8V
0.08
0.1
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
4.4
3.8
3.6
3.7
12
12
9
8
= 5V
I
D
2.4
2.4
1.6
1.5
1.2
2.6
2
2
1
(A)
MOSFETs
P
D
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(W)