BF246A Fairchild Semiconductor, BF246A Datasheet - Page 108

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SOT-323 PNP Configuration
FJX1182
FJX3906
DS901902
FJX2907A
SOT-623F NPN Configuration
FJZ945
SOT-623F PNP Configuration
FJZ733
SOT-89 NPN Configuration
KSC2982
FJC2098
KSD1621
KSC2883
FJC1963
FJC690
KSC2881
SOT-89 PNP Configuration
FJC790
FJC1386
KSB798
KSB1121
KSA1203
FJC1308
KSA1201
SuperSOT NPN Configuration
FSB649
FMMT449
FSB619
FSB560A
FSB560
SuperSOT PNP Configuration
FSB749
FMMT549
Products
V
CEO
120
120
-40
50
30
40
50
60
50
50
10
20
25
30
30
45
20
25
25
30
30
25
30
50
60
60
25
30
(V)
V
CBO
120
120
-50
60
35
40
60
60
60
60
30
50
30
30
50
45
30
30
30
30
30
35
50
50
80
80
35
35
(V)
V
EBO
-5
5
5
5
5
5
5
5
6
6
6
5
6
5
5
6
5
6
5
6
5
5
5
5
5
5
5
5
(V)
Max (A)
0.15
0.15
0.15
0.15
0.5
0.2
0.6
1.5
0.8
1.5
0.8
I
-2
2
5
2
3
2
5
1
2
3
3
1
2
2
2
3
1
C
Min
100
100
140
120
100
100
120
500
300
100
100
100
100
300
250
100
100
100
70
70
40
70
40
80
80
90
80
80
2-103
Discrete Power Products –
Max
700
240
300
700
300
700
700
600
390
560
320
560
240
800
390
400
560
320
390
240
300
300
550
300
300
300
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
10
CE
-2
6
1
1
6
6
6
1
2
2
2
2
2
5
2
1
2
2
2
5
2
2
2
2
2
2
2
(V) @I
1000
1000
C
100
150
500
500
100
500
500
100
100
500
100
100
500
500
100
500
200
500
500
500
-10
10
1
1
1
1
(mA)
Bipolar Transistors and JFETs
Max (V)
–0.25
0.25
0.45
0.08
0.45
0.32
0.35
0.75
0.3
0.4
0.3
1.6
0.3
0.3
0.5
0.4
0.4
0.6
0.6
0.3
0.6
1
2
1
1
2
1
1
V
@I
CE (sat)
1500
1000
1500
1500
2000
2000
2000
2000
2000
1500
1500
1500
3000
2000
3000
C
-500
100
100
500
100
100
100
500
500
50
20
4
4
(mA) @I
B
100
100
150
200
200
200
150
100
300
200
300
0.5
10
10
50
10
10
50
75
30
50
75
30
50
50
-5
5
2
(mA)