BF246A Fairchild Semiconductor, BF246A Datasheet - Page 112

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
2N4400
2N4401
KSP2222A
MPS6531
PN2222A
2N5962
MPSA18
SS9014
BC237
BC547
BC550
PN930
KSC815
PN3642
PN100
PN100A
BC337
BC635
2N6428A
BC182LB
2N5210
KSC1815
KSC945
2N3416
2N3417
BC182
BC182B
BC182L
BC182LA
KSD1616
MPSA05
MPS651
BC337A
2N5961
PN2484
Products
V
CEO
40
40
40
40
40
45
45
45
45
45
45
45
45
45
45
45
45
45
50
50
50
50
50
50
50
50
50
50
50
50
60
60
60
60
60
(V)
V
CBO
60
60
75
60
75
45
45
50
50
50
50
45
60
60
75
75
50
45
60
60
50
60
60
50
50
60
60
60
60
60
60
80
60
60
60
(V)
V
EBO
6
6
6
5
6
8
6
5
6
6
5
5
5
5
6
6
5
5
6
6
4
5
5
5
5
5
5
5
5
6
4
5
5
8
5
(V)
Max (A)
0.15
0.15
0.6
0.6
0.6
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.5
0.5
0.5
0.8
0.1
0.1
0.5
0.5
0.5
0.5
0.5
0.5
0.1
0.1
I
–
–
–
–
1
1
1
1
C
Min
100
100
100
600
500
120
110
110
100
100
300
100
250
200
180
135
100
100
150
100
50
90
60
40
40
40
80
70
40
75
80
80
80
80
75
2-107
Discrete Power Products –
Max
1400
1500
1000
150
300
300
270
300
800
800
800
300
400
120
450
600
630
250
600
700
700
225
540
600
400
700
500
–
–
–
–
–
–
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
4.5
4.5
10
10
10
CE
1
1
1
5
5
5
5
5
5
5
1
1
1
1
2
5
5
5
6
6
5
5
5
5
2
1
2
1
5
5
(V) @I
0.01
0.01
0.01
C
150
150
150
100
150
150
100
150
100
100
100
100
100
100
100
500
100
0.1
10
10
50
10
10
10
1
2
2
2
2
1
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.75
0.75
0.22
0.25
0.25
0.35
0.3
0.2
0.3
0.3
0.6
0.6
0.6
0.4
0.4
0.4
0.7
0.5
0.2
0.6
0.7
0.3
0.3
0.3
0.6
0.6
0.6
0.6
0.3
0.3
0.7
0.2
1
1
1
V
@I
CE (sat)
1000
1000
C
500
500
500
100
500
100
100
100
100
150
150
200
200
500
500
100
100
100
100
100
100
100
100
500
10
50
10
10
10
50
50
10
1
(mA) @I
B
100
0.5
0.5
0.1
50
50
50
10
50
15
15
20
20
50
50
10
10
10
10
50
10
50
–
5
5
5
5
5
5
1
3
3
5
5
1
(mA)