S912XEG128J2MAL Freescale Semiconductor, S912XEG128J2MAL Datasheet - Page 1207
S912XEG128J2MAL
Manufacturer Part Number
S912XEG128J2MAL
Description
16-bit Microcontrollers - MCU 16BIT 128K FLASH 16K RAM
Manufacturer
Freescale Semiconductor
Datasheet
1.S912XEG128J2MAL.pdf
(1324 pages)
Specifications of S912XEG128J2MAL
Rohs
yes
Core
RISC
Processor Series
HCS12X
Data Bus Width
16 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
128 KB
Data Ram Size
12 KB
On-chip Adc
Yes
Operating Supply Voltage
5 V
Operating Temperature Range
- 40 C to + 125 C
Package / Case
LQFP-112
Mounting Style
SMD/SMT
A/d Bit Size
12 bit
A/d Channels Available
8
Data Rom Size
4 KB
Interface Type
CAN, I2C, SCI, SPI
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
On-chip Dac
Yes
Program Memory Type
Flash
Supply Voltage - Max
5.5 V
Supply Voltage - Min
3.13 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S912XEG128J2MAL
Manufacturer:
NXP/恩智浦
Quantity:
20 000
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A.1.8
Power dissipation and thermal characteristics are closely related. The user must assure that the maximum
operating junction temperature is not exceeded. The average chip-junction temperature (T
obtained from:
T
T
P
Θ
The total power dissipation can be calculated from:
P
Two cases with internal voltage regulator enabled and disabled must be considered:
Freescale Semiconductor
J
A
D
INT
JA
P
R
=
D
=
1. Internal voltage regulator disabled
2. Internal voltage regulator enabled
R
=
DSON
P
=
DSON
Junction Temperature, [°C ]
=
Ambient Temperature, [°C ]
=
Total Chip Power Dissipation, [W]
IO
Package Thermal Resistance, [°C/W]
P
P
Chip Internal Power Dissipation, [W]
IO
=
INT
=
is the sum of all output currents on I/O ports associated with V
∑
Power Dissipation and Thermal Characteristics
=
i
+
V
--------------------------------------- for outputs driven high
V
----------- - for outputs driven low
DD35
P
I
R
OL
OL
IO
DSON
I
OH
;
–
V
⋅
OH
I
P
IO i
INT
;
2
=
MC9S12XE-Family Reference Manual Rev. 1.25
P
I
INT
DD
⋅
=
V
DD
I
DDR
T
J
+
=
I
⋅
DDPLL
T
V
A
DDR
+
(
P
⋅
+
D
V
I
•
DDA
DDPLL
Θ
JA
⋅
)
V
DDA
+
I
DDA
⋅
V
DDX
DDA
Appendix A Electrical Characteristics
, whereby
J
) in °C can be
1207
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