AM29BDD160G AMD [Advanced Micro Devices], AM29BDD160G Datasheet - Page 75

• Manufacturer Part Number: AM29BDD160G
• Description: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 2.5 V V
2. Under worst case conditions of 145°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 1M cycles.
7. PPBs have a minimum program/erase cycle endurance of 100 cycles.
LATCHUP CHARACTERISTICS
Note:Includes all pins except V
PQFP AND FORTIFIED BGA PIN CAPACITANCE
Note:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
Input voltage with respect to VSS on all pins except I/O pins
(including A9, ACC, and WP#)
Input voltage with respect to VSS on all I/O pins
VCC Current
typically assume checkerboard pattern.
Tables 19 and 20 for further information on command definitions.
Sector Erase Time
Chip Erase Time
Double Word Program Time
Word (x16) Program Time
Accelerated Double Word Program Time
Accelerated Chip Program Time
Chip Program Time
(Note 3)
Parameter
Symbol
C
C
C
OUT
IN2
IN
Minimum Pattern Data Retention Time
Parameter
A
= 25°C, f = 1.0 MHz.
Parameter
Description
Parameter Description
Control Pin Capacitance
CC
Output Capacitance
Input Capacitance
. Test conditions: V
x16
x32
CC
= 2.5 V, 100,000 cycles.
Typ (Note 1)
Am29BDD160G
CC
1.0
23
18
15
10
12
8
5
= 3.0 V, one pin at a time.
Test Conditions
Max (Note 2)
230
250
210
130
100
120
50
150°C
125°C
5
Test Setup
V
V
V
OUT
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
Unit
, 1M cycles. Additionally, programming
µs
µs
µs
s
s
s
Min
10
20
Excludes system level
programming prior to
overhead (Note 5)
erasure (Note 4)
Typ
Excludes 00h
8.5
7.5
Comments
6
V
+100 mA
CC
12.5 V
Max
+ 1.0 V
Max
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF
73