PF38F5070M0Q0B0 NUMONYX [Numonyx B.V], PF38F5070M0Q0B0 Datasheet - Page 8

• Manufacturer Part Number: PF38F5070M0Q0B0
• Manufacturer: NUMONYX [Numonyx B.V]

1.0
1.1
1.2
Table 1:
1.3
Table 2:
Datasheet
8
1.8 V
Block
Main Array
Partition
Programming Region
Segment
Byte
Word
Kb
KB
KW
Mb
MB
APS
CFI
DU
ECR
Acronym
Term
Definition of Terms
List of Acronyms
Introduction
Numonyx™ StrataFlash
StrataFlash
performance, low-power synchronous-burst read mode and asynchronous read mode
at 1.8 V. It features flexible, multi-partition read-while-program and read-while-erase
capability, enabling background programming or erasing in one partition
simultaneously with code execution or data reads in another partition. The eight
partitions allow flexibility for system designers to choose the size of the code and data
segments. The Numonyx™ StrataFlash
65 nm ETOX* X and 90 nm ETOX* IX process technology and is available in industry-
standard chip-scale packaging.
Document Purpose
This document describes the specifications of the Numonyx™ StrataFlash® Cellular
Memory device.
Nomenclature
Acronyms
Automatic Power Savings
Common Flash Interface
Don’t Use
Enhanced Configuration Register (Flash)
®
Refers to VCC and VCCQ voltage range of 1.7 V to 2.0 V
A group of bits that erase with one erase command
A group of 256-KB blocks used for storing code or data
A group of blocks that share common program and erase circuitry and command status register
An aligned 1-KB section within the main array
A 32-byte section within the programming region
8 bits
2 bytes = 16 bits
1024 bits
1024 bytes
1024 words
1,048,576 bits
1,048,576 bytes
memory with multi-level cell (MLC) technology. It provides high-
®
Cellular Memory is the sixth generation Numonyx™
®
Cellular Memory is manufactured using Intel*
Definition
Meaning
Numonyx™ StrataFlash
®
Cellular Memory (M18)
309823-10
April 2008