PF38F5070M0Q0B0 NUMONYX [Numonyx B.V], PF38F5070M0Q0B0 Datasheet - Page 46

• Manufacturer Part Number: PF38F5070M0Q0B0
• Manufacturer: NUMONYX [Numonyx B.V]

Table 13: DC Current Specifications (Sheet 3 of 3)
6.3
Table 14: DC Voltage Specifications
Datasheet
46
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
V
V
V
V
V
V
V
Notes:
1.
2.
I
Sym
IL
IH
OL
OH
PPLK
LKO
LKOQ
Symbol
I
PPBC
PPE
All currents are RMS unless noted. Typical values at typical V
I
Sampled, not 100% tested.
V
V
I
I
Characteristics” on page 68
I
During signal transitions, voltage can undershoot to –1.0 V and overshoot to maximum V
ns.
V
CCS
CCES
CCW
DPD
V
V
CC
CC
PP
PP
PP
≤ V
read + program current is the sum of V
read + erase current is the sum of V
, I
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
is the current measured 40 µs after entering DPD.
Erase
Blank Check
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
V
is specified with the device deselected. If device is read while in erase suspend, current is I
CCE
PP
CC
CCQ
PPLK
DC Voltage Specifications
Lock-Out Voltage
Lock Voltage
measured over typical or max times specified in
Lock Voltage
inhibits erase and program operations. Do not use V
Parameter
Parameter
Litho
(nm)
CC
V
CCQ
read and V
CC
read and V
Density
(Mbit)
V
V
CCQ
CCQ
Min
1.0
0.9
CC
—
—
0
–0.1
1.7 V – 2.0 V
–0.4
erase currents.
CC
Section 7.4, “Program and Erase
1.7 V – 2.0 V
0.05
0.05
program currents.
Typ
CC
, T
PPL
C
Numonyx™ StrataFlash
= +25 °C.
and V
Max
V
0.4
0.1
0.4
Max
CCQ
—
—
—
0.1
0.1
PPH outside their valid ranges.
Unit
mA
mA
Unit
V
V
in progress
V
check in progress
PP
PP
—
—
V
V
I
V
V
I
—
—
—
Test Conditions
CCQ
= V
= V
OL
OH
Test Condition
CC
CCQ
CC
CCQ
= 100 µA
= –100 µA
+1.0 V for durations of < 2
= V
= V
PPL
PPL
®
= V
= V
Cellular Memory (M18)
= V
= V
CC
CC
CCES
CCQ
CCQ
MIN
MIN
PPH,
PPH,
MIN
MIN
plus I
erase
blank
CCR
309823-10
April 2008
Notes
Notes
—
—
—
—
—
1
2
3
3