PF38F5070M0Q0B0 NUMONYX [Numonyx B.V], PF38F5070M0Q0B0 Datasheet - Page 44

• Manufacturer Part Number: PF38F5070M0Q0B0
• Manufacturer: NUMONYX [Numonyx B.V]

6.2
Table 13: DC Current Specifications (Sheet 1 of 3)
Datasheet
44
I
Sym
CCAPS
I
I
I
CCS
LO
LI
Input Load Current
Output Leakage Current
V
APS
CC
Standby
Ceramic chip capacitors of 0.01 to 0.1 µF capacitors should be used between all VCC,
VCCQ, VPPsupply connections and system ground. These high-frequency, inherently
low-inductance capacitors should be placed as close as possible to the device package,
or on the opposite side of the printed circuit board close to the center of the device-
package footprint.
Larger (4.7 µF to 33.0 µF) electrolytic or tantulum bulk capacitors should also be
distributed as needed throughout the system to compensate for voltage sags caused by
circuit trace inductance.
Transient current magnitudes depend on the capacitive and inductive loading on the
device’s outputs. For best signal integrity and device performance, high-speed design
rules should be used when designing the printed-circuit board. Circuit-trace
impedances should match output-driver impedance with adequate ground-return
paths. This will help minimize signal reflections (overshoot/undershoot) and noise
caused by high-speed signal edge rates.
DC Current Specifications
The M18 device includes specifications for different lithographies, densities, and
frequencies. For additional information on combinations, see
Litho/Density/Frequency Combinations” on page 10
Description.
Parameter
Litho
(nm)
90
65
90
65
Density
(Mbit)
1,024
1,024
256
512
128
256
512
256
512
128
256
512
1.7 V – 2.0 V
Typ
35
50
45
50
60
70
35
50
45
50
60
70
—
—
Numonyx™ StrataFlash
Max
120
115
130
160
185
120
115
130
160
185
±1
±1
95
95
in the
Unit
µA
µA
µA
µA
Section 2.0, “Functional
V
V
V
V
V
V
V
V
CE# = V
RST# = V
(for I
WP# = V
V
V
CE# = V
RST# = V
All inputs are at rail to
rail (V
CC
CCQ
IN
CC
CCQ
IN
CC
CCQ
CC
CCQ
Table 4, “M18 Product
Test Conditions
= V
= V
= V
= V
= V
= V
CCS
= V
= V
= V
= V
CCQ
CCQ
CCQ
®
CC
CC
CC
CC
)
CCQ
SSQ
CCQ
CCQ
CCQ
IH
CCQ
CCQ
CCQ
Cellular Memory (M18)
Max
or V
Max
Max
Max
or V
or V
Max
Max
Max
Max
or GND
SSQ
SS
SS
).
309823-10
April 2008
Notes
1,2
—
1