emc163sp16k Emlsi Inc., emc163sp16k Datasheet - Page 31

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emc163sp16k

Manufacturer Part Number
emc163sp16k
Description
1mx16 Bit Cellularram Ad-mux
Manufacturer
Emlsi Inc.
Datasheet
Table 11: Partial-Array Refresh Specifications and Conditions
Note: IPAR (MAX) values measured at 85°C. IPAR might be slightly higher for up to 500 ms after changes to the PAR array partition or when entering
standby mode.
Table 12: Capacitance
Note: 1. These parameters are verified in device characterization and are not 100% tested.
Figure 20: AC Input/Output Reference Waveform
Note:
1. AC test inputs are driven at VCCQ for a logic 1 and VSSQ for a logic 0. Input rise and fall times (10% to 90%) <1.6ns.
2. Input timing begins at VCCQ/2.
3. Output timing ends at VCCQ/2.
Figure 21: AC Output Load Circuit
Note: All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).
Partial-array refresh standby
Capacitance(A/DQ)
Input Capacitance
Description
Input/Output
Description
current
Input
VccQ
VssQ
1
V
IN
Tc = = +25°C; f = 1 MHz;
= V
VccQ/2
CCQ
Conditions
Conditions
V
or 0V, CE# = V
IN
2
= 0V
DUT
CCQ
Test Points
Test Points
30pF
I
PAR
50Ω
31
Symbol
Symbol
Standard power (no
C
C
IN
IO
designation)
VccQ/2
VccQ/2
1Mx16 CellularRAM AD-MUX
3
Min
2.0
3.0
Array Partition
Output
Full
1/2
1/4
1/8
0
EMC163SP16K
Max
6.5
6
Max
70
65
60
60
50
Unit Notes
pF
pF
Unit
uA
1
1

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