LM3S102-IRN20 Luminary Micro, Inc., LM3S102-IRN20 Datasheet - Page 318
![no-image](/images/no-image-200.jpg)
LM3S102-IRN20
Manufacturer Part Number
LM3S102-IRN20
Description
Microcontroller
Manufacturer
Luminary Micro, Inc.
Datasheet
1.LM3S102-IRN20.pdf
(335 pages)
- Current page: 318 of 335
- Download datasheet (2Mb)
Electrical Characteristics
18.1.4
18.1.5
318
Power Specifications
The power measurements specified in Table 18-4 are run on the core processor using SRAM with
the following specifications:
Table 18-4. Power Specifications
a. Pending characterization completion.
Flash Memory Characteristics
Table 18-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
I
DD_DEEPSLEEP
Parameter
Parameter
I
V
LDO=2.5
Temperature=25°C
System Clock=20 MHz (with PLL)
Code
DD_SLEEP
I
T
DD_RUN
PE
T
DD
T
ERASE
PROG
T
RET
ME
CYC
=3.3 V
while(1){}
Parameter Name
Number of guaranteed program/erase
cycles
Data retention at average operating
temperature of 85°C
Word program time
Page erase time
Mass erase time
Parameter Name
Run mode
Sleep mode
Deep-Sleep mode
a
before failure
executed from SRAM with no active peripherals
Preliminary
Min
-
10,000
-
-
Min
200
10
20
20
pending
pending
Nom
35
Nom
a
-
-
-
-
-
a
a
pending
pending
pending
Max
Max
October 6, 2006
-
-
-
-
-
a
a
a
cycles
years
Unit
Unit
mA
ms
ms
μA
μA
μs
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