LPC3130 Philips Semiconductors (Acquired by NXP), LPC3130 Datasheet - Page 45

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LPC3130

Manufacturer Part Number
LPC3130
Description
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet

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NXP Semiconductors
Table 14.
T
[1]
[2]
[3]
[4]
[5]
LPC3130_3131_0
Preliminary data sheet
Symbol Parameter
t
t
t
t
t
t
t
t
h(o)
d(AV)
h(A)
d(QV)
h(Q)
su(D)
h(D)
QZ
amb
Parameters are valid over operating temperature range unless otherwise specified.
All values valid for pads set to high slew rate. VDDE_IOA = V_DDE_IOB = 1.8 ± 0.15 V. VDDI = 1.2 ± 0.1 V.
f
Applies to signals: EBI_NRAS_BLOUT, EBI_NCAS_BLOUT, EBI_NWE, EBI_CKE, EBI_NDYCS.
See registers MPMCDynamicReadConfig and MPMC_delaymodes in the LPC3130/31 user manual for the values of CMD_DLY .
oper
=
40
= 1/T
address valid delay
time
address hold time
data output valid
delay time
data output hold time
data input set-up
time
data input hold time
data output
high-impedance time
°
output hold time
Dynamic characteristics of SDR SDRAM memory interface
C to +85
CLCL
°
C, unless otherwise specified.
Conditions
on pin EBI_CKE
on pins
EBI_NRAS_BLOUT,
EBI_NCAS_BLOUT,
EBI_NWE, EBI_CKE,
EBI_NDYCS
Rev. 0.08 — 25 September 2008
[1][2]
Min
-
-
-
-
-
-
-
-
-
CMD_DLY + <tbd>
CMD_DLY + <tbd>
CMD_DLY + <tbd>
CMD_DLY + <tbd>
Typical
<tbd>
<tbd>
-
-
-
LPC3130/3131
CMD_DLY +
CMD_DLY +
© NXP B.V. 2008. All rights reserved.
<T
<tbd>
<tbd>
Max
CLCL
-
-
-
-
-
-
45 of 60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns

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