MC68HC908LD60IFU Freescale Semiconductor, MC68HC908LD60IFU Datasheet - Page 286

• Manufacturer Part Number: MC68HC908LD60IFU
• Manufacturer: Freescale Semiconductor

Specifications of MC68HC908LD60IFU

• Cpu Family: HC08
• Device Core Size: 8b
• Frequency (max): 6MHz
• Program Memory Type: Flash
• Program Memory Size: 60KB
• Total Internal Ram Size: 1KB
• # I/os (max): 39
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• On-chip Adc: 6-chx8-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 64
• Package Type: PQFP
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications
22.13 FLASH Memory Characteristics
Technical Data
286
Notes:
Program bus clock frequency
FLASH block size
FLASH programming size
Read bus clock frequency
Page erase time
Mass erase time
PGM/ERASE to HVEN set up time
High-voltage hold time
High-voltage hold time (mass erase)
Program hold time
Program time
Return to read time
Cumulative program HV period
Row erase endurance
Row program endurance
Data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. t
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
8. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
9. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
$0C00–$0FFF
$1000–F9FF
4,7616 bytes array
13k-bytes array
memory.
memory.
HVEN to logic 0.
t
erase / program cycles.
erase / program cycles.
specified.
rcv
READ
HV
HV1
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is the t
is defined as the frequency range for which the FLASH memory can be read.
HV
spec for 13k-bytes array
Characteristic
(9)
Table 22-12. FLASH Memory Electrical Characteristics
(7)
(8)
nvs
+ t
nvh
MErase
Erase
+ t
pgs
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
Electrical Specifications
+ (t
PROG
×
t
64) ≤ t
Symbol
t
MErase
f
Erase
t
Read
t
t
t
HV1
PROG
HV
t
rcv
t
t
t
nvhl
—
—
—
nvs
nvh
pgs
—
—
—
—
(4)
(5)
(6)
(1)
(2)
HV
(3)
max.
Min
32k
100
10k
10k
10
10
20
20
—
—
10
1
5
5
1
128
512
64
MC68HC908LD60
Freescale Semiconductor
Max
6M
40
—
—
—
—
—
—
—
—
—
—
—
6
3
—
Cycles
Cycles
Bytes
Bytes
Bytes
Years
MHz
Unit
Rev. 1.1
ms
ms
ms
ms
Hz
µs
µs
µs
µs
µs
ns