BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 73

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

N-channel junction field-effect transistors for general RF applications
Bold = Highly recommended product
(1)
DC, LF and HF amplifiers
Pre-amplifiers for AM tuners in car radios
RF stages FM portables, car radios, main radios & mixer stages
Low-level general purpose amplifiers
General-purpose amplifiers
AM input stages UHF/VHF amplifiers
Type
BF245A
BF245B
BF245C
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BF862
BF510
BF511
BF512
BF513
BFR30
BFR31
BFT46
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ620
Asymmetrical
(1)
(1)
(1)
(1)
Package
SOT54
SOT54
SOT54
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
max
V
(V)
30
30
30
30
30
30
30
30
30
25
25
25
20
20
20
20
20
25
25
25
25
25
25
25
DS
(mA)
max
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
50
50
50
50
I
5
5
5
G
min
0.7
2.5
0.2
24
24
12
12
11
12
10
10
12
12
2
6
2
6
3
6
2
6
6
4
1
(mA)
I
DSS
max
6.5
6.5
6.5
1.5
15
25
15
25
13
18
15
25
25
12
18
10
60
30
60
60
7
3
7
5
min
0.4
0.4
0.4
0.5
0.5
0.5
0.2
0.5
0.8
0.3
1
1
2
2
typ. 0.8
typ. 2.2
typ. 1.5
typ. 3
V
<2.5
<1.2
(V)
<8
<8
<8
<5
gsoff
CHARACTERISTICS
max
1.0
1.5
6.5
6.5
6.5
7.5
7.5
7.5
7.5
7.5
7.5
2
2
4
min
4.5
4.5
4.5
1.5
12
16
20
35
3
3
3
3
3
3
1
|Yfs|
(mS)
>10
>10
>10
2.5
>1
10
4
6
7
max
6.5
6.5
6.5
6.5
6.5
6.5
4.5
20
25
30
4
-
-
-
-
Typ.=1.1
Typ.=1.1
Typ.=1.1
typ=1.9
min
0.8
0.8
0.8
0.8
0.8
0.8
0.4
0.4
0.4
0.4
2.1
2.1
2.1
1.5
1.5
1.5
1.3
1.3
1.3
1.3
(pF)
C
rs
max
2.7
2.7
2.7
0.5
0.5
0.5
0.5
2.5
2.5
2.5
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
NXP Semiconductors RF Manual 14
th
edition
75