BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 58

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

` Reduces component count and considerably simplifies radar
` P1 dB output power 200 W
` Efficiency > 40%
` Industry standard footprint
` 50 Ω in/out matched for entire bandwidth
` Lightweight heat sink included
` The advantages of LDMOS in comparison with Bipolar
60
Features:
system design
For a complete list of products see the respective small
signal and power microwave pages
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Very consistent performance – no tuning required
- Improved thermal characteristics, no thermal runaway
- Non-toxic packaging and ROHS compliance
NXP Semiconductors RF Manual 14
th
edition
Microwave applications and bands of operation
System
VHF and UHF
L-Band
S-Band
X-band
Commercial Avionics
Military Avionics
DME (Distance Measuring Equipment)
Transponders
Mode A / Mode S / Mode C / TCAS
IFF Transponders (Identification, Friend or Foe)
TACAN (Tactical Air Navigation)
JTIDS / MIDS
(Joint Tactical Information Distribution System)
Marine radar
8000 - 12000 MHz
1200 - 1400 MHz
2700 - 3500 MHz
1030 - 1090 MHz
1030 - 1090 MHz
9300 - 9500 MHz
978 - 1215 MHz
960 - 1215 MHz
960 - 1215 MHz
Frequency
<1 GHz