BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 26

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.5 Consumer Mobile
Note: looking for MoCA and Satellite Multi Switch Boxes? See chapter 1.4 TV, STB and Satellite.
1.5.1 Mobile Platforms (GPS / TV on mobile / FM radio / Reference clock / CMMB^ / LTE)
^ = Chinese Multimedia Mobile Broadcasting (CMMB)
Application diagram
Recommended products
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = also in SOD523
28
Function
Function
Function
Function
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
CMMB LNA
GPS LNA
LTE LNA
FM radio
LNA
NXP Semiconductors RF Manual 14
LNA
LNA
LNA
LNA
LNA
Product
Product
Product
Product
Transistor
Transistor
MMIC
MMIC
MMIC
SiGe:C MMIC
Frequency
SiGe:C MMIC
Wideband
Wideband
transistor
transistor
transistor
SiGe:C
SiGe:C
SiGe:C
MMIC
MMIC
J-FET
TUNER
GPS RF
CMMB DECODER
GPS RECEIVER
TRANSCEIVER
TRANSCEIVER
MULTI-BAND
th
FM RADIO
edition
DECODER
ANALOG TV RECEIVER
SOT891
SOT23
SOT891
Package
SOT891
Package
SOT323
Package
SOT891
SOT886
SOT886
Package
SOT343
SOT343F
GPS BB
VIDEO PROCESSOR
CLK BUFFER
Type
BGU7003
Type
BFR93AW
BFS505
BGU7003
BF510
Type
BGU7003
BGU7005
BGU7007*
Type
BFG425W
BFU725F/N1
BGU7003
VCTCXO
Vref
Vref
PROCESSING
APPLICATION
TV on Mobile
Features
`
`
`
`
`
`
Function
Function
Function
tuning diode
BB
Reference
Low-noise, high-gain microwave MMIC
Maximum stable gain = 19 dB at 1.575 GHz
110-GHz fT-Silicon Germanium technology
Optimized performance at low (5-mA) supply current
Extemely thin, leadless 6-pin SOT891 package
Integrated biasing and shutdown for easy integration
Mobile
TV on
clock
LNA
brb402
Product
Product
Product
CLK buffer
Transistor
RF diode
VCTCXO
MMIC
SiGe:C MMIC
Frequency
Frequency
Wideband
Wideband
Wideband
transistor
transistor
transistor
transistor
Varicap
diode^
SiGe:C
Package
SOT343
SOT343F
SOT891
Package
SOT882T
Package
SOT323
SOT363A
Type
BFG425W
BFU725F/N1
BGU7003
Type
BB202LX
BB178LX
BB179LX
BB181LX
BB182LX
BB184LX
BB187LX
Type
BFR93AW
BFM520