BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 40

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

2.3
Broadband QUBiC4 MMICs for all 400-2700 MHz applications
Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal
performance and added-value features to all 400-2700 MHz applications − at a lower cost than
GaAs versions.
Features
` ESD protection at all pins
` Single-supply operation (3.3 or 5 V)
` Integrated active biasing
` Fast shutdown
` Quiescent current adjustment
` Two package options, smallest leadless package (3 x 3 mm)
Applications
` Wireless infrastructure (base station, repeater)
` eMetering
` Broadband CPE (MoCA)
` Satellite Master Antenna TV (SMATV)
` Industrial applications
` W-LAN / ISM / RFID
Manufactured in NXP’s breakthough QUBiC4 process, these
MMICs deliver a comparable level of RF performance as their
GaAs equivalents, but at a lower cost and with additional
features, like thermal performance and ESD robustness. The
QUBiC4 process makes it possible to support even more
features, including active biasing, quiescent adjustment, VGA
interfaces, and a power-saving shutdown mode. To increase
design flexibility, all the MMICs support single-supply (3.3/5 V)
operation. And, to save space, they are available in the smallest
package size (3 x 3 mm) and with leadless options.
MoCA
These MMICs are exceptionally well-suited for use a MoCA
(Multimedia over Cable Alliance) PA in both the STB and in PC
dongles. The MMICs offer the system designer the ability to
42
The specifications of the BGA7130 and BGA7133 are target specifications until development is completed.
* = check status at 3.1 new products, as this type has not been released yet for mass production.
BGA7027*
BGA7127*
BGA7130*
BGA7133*
BGA7124
BGA7024
and leaded SOT-89
Type
NXP Semiconductors RF Manual 14
NXP Medium-Power MMICs BGA7xxx for broadband applications
SOT908
SOT908
SOT908
SOT908
SOT89
SOT89
Package
leadless
leadless
leadless
leadless
leaded
leaded
400 - 2700
400 - 2700
400 - 2700
400 - 2700
400 - 2700
400 - 2700
(MHz)
f
th
edition
Typ
V
(V)
5
5
5
5
5
5
cc
Supply
(mA)
Typ
130
180
170
110
-
-
I
cc
(mA)
Max
200
325
-
-
-
-
Min
(V)
V
0
0
0
0
-
-
I(D)L(SHDN)
Max
Shutdown control
(V)
0.7
0.7
0.7
0.7
-
-
tailor gain or P1dB for specific platform requirements. Between
475-625 MHz and 1.15-1.5 GHz gain flatness is unrivalled. NXP
Medium Power MMICs operate at low current consumption
and offer a fast shut-down function to save as much power
as possible. With ESD protection, active biasing and SOT89
package availability, design-in is simplified and requires a
minimum of external components.
Base station
The high power level of these MMICs makes them an excellent
choice for mobile-infrastructure applications. They offer the
highest gain overall all base stations frequencies. The quiescent-
current feature allows for high efficiency and linearity in Class-AB
operation. The bias circuitry delivers a stable performance over
temperature and supply variations. The integrated shutdown
function is a power-saving feature and can be used for fast
shutdown. The MMICs can be tuned for any band between
VHF and 2.7 GHz.Unbeatable thermal performance (30 °C/W)
improves overall quality and reliability.
eMetering
These MMICs are also very well suited to eMetering applications
in the 900-2400 MHz ISM band. High integration and single-
supply operation mean that the MMICs can be combined with
just a few other components to create a full-featured solution.
The MMICs can be operated on battery power (with an energy-
saving shutdown mode) and are tunable between Class A and
AB. They can also work on a power-line network, so they support
gas metering with or without a power connection. The built-
in reliability and quality of a silicon-based process provides
longevity, as does the improved ESD performance.
Min
2.5
2.5
2.5
2.5
(V)
V
-
-
I(D)H(SHDN)
Vbias
Vbias
Vbias
Vbias
Max
(V)
-
-
I
I(D)L(SHDN)
(µA)
Typ
4
4
4
4
-
-
Gp
dB
22
22
20
19
18
18
Typ @ f = 940 MHz
RF performance
P
dBm
L(1dB)
25
30
24
28
28
33
OIP3
dBm
38
38
44
41
45
46
NF
dB
5
3
3
3
4
4
Gp
dB
16
16
13
12
12
12
Typ @ f = 1960 MHz
RF performance
P
dBm
L(1dB)
24
25
28
28
30
33
OIP3
dBm
38
38
43
43
45
47
NF
dB
5
4
5
4
4
4