BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 66

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

3.3
3.3.1 Wideband transistors
Why choose NXP Semiconductors’ wideband transistors
` Broad portfolio (1
` Short leadtimes
` Smallest packages
` Volume delivery
Wideband transistors line-up per frequency
68
NEW : RF wideband transistor selection guide on www.nxp.com/rftransistors
(GHz)
f
T
100
NXP Semiconductors RF Manual 14
10
Easy-to-use parametric filters help you to choose the right RF wideband
transistor for your design.
1
0.1
RF Bipolar transistors
PIN
1
2
3
4
1
2
3
4
1
2
3
4
0.2
st
- 7
th
0.5
Type/XR (see Fig.2)
generation)
Type/X (see Fig.1)
Type (see Fig.1)
1
DECRIPTION
(18)
(25)
(1)
collector
collector
collector
emitter
emitter
emitter
emitter
emitter
emitter
(30)
th
base
base
base
edition
2
(7)
(4)
(8)
(19)
(26)
5
(33)
(34)
10
(9)
(38)
(14)
(20)
(31)
(3)
(27)
20
(35)
(10)
(15)
(21)
4
1
50
(39)
Wideband transistors
The f
characteristics as a function of collector current (I
generations of RF wideband transistors. A group of transistors
having the same collector current (I
frequencies (f
products in the table, detailing their RF characteristics.
(29)
(16)
(36)
(22)
T
100
-I
3
2
C
(11)
Figure 1
curve represents Transition Frequency (f
(40)
(23)
200
(37)
(32)
(12)
T
2 nd generation
1 st generation
3 rd generation
) represents a curve. The curve number matches
7 th generation
6 th generation
5 th generation
4 th generation
I
C
(mA)
3
2
500
(41)
bra510
1
4
1000
Figure 2
C
) & similar transition
T
C
)
) for the six