BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 102

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

7. Abbreviations
104
3-way
AM
ASIC
ASYM
BPF
BUC
CATV
CDMA
CMMB
CMOS
CQS
DAB
DECT
DiSEqC
DSB
DVB
EDGE
ESD
FET
FM
GaAs
GaN
Gen
GPS
GSM
HBT
HDTV
HF
HFC
HFET
HPA
HVQFN
IF
ISM
LDMOS
LNA
LNB
LO
LPF
MESFET
MMIC
MMPP
NXP Semiconductors RF Manual 14
Doherty design using 3 discrete transistors
Amplitude Modulation
Application Specific Integrated Circuit
Asymmetrical design of Doherty (main and
peak device are different)
Band Pass Filter
Block Up Converter
Community Antenna Television
Code Division Multiple Access
Chinese Multimedia Mobile Broadcasting
Complementary Metal Oxide Semiconductor
Customer Qualification Samples
Digital Audio Broadcasting
Digital Enhanced Cordless
Telecommunications
Digital Satellite Equipment Control
Digital Signal Processor
Digital Video Broadcasting
Enhanced Data Rates for GSM Evolution
Electro Static Device
Field Effect Transistor
Frequency Modulation
Gallium Arsenide
Gallium Nitride
Generation
Global Positioning System
Global System for Mobile communications
Heterojunction Bipolar Transistor
High Definition Television
High Frequency (3-30 MHz)
Hybrid Fiber Coax
Heterostructure Field Effect Transistor
High Power Amplifier
Plastic thermally enHanced Very thin Quad
Flat pack No leads
Intermediate Frequency
Industrial, Scientific, Medical - reserved
frequency bands
Laterally Diffused Metal-Oxide-Semiconductor
Low Noise Amplifier
Low Noise Block
Local Oscillator
Low Pass Filter
Metal Semiconductor Field Effect Transistor
Monolithic Microwave Integrated Circuit
Main and peak devices realized separately in
halves of push pull transistor
th
edition
MPPM
MoCA
MOSFET
MPA
MRI
NF
NIM
NMR
PA
PAR
PEP
pHEMT
PLL
QUBiC
RF
RFS
RoHS
RX
SARFT
SER
SiGe:C
SMATV
SMD
SPDT
SYM
TD-SCDMA Time Division-Synchronous Code Division
TCAS
TMA
TTFF
TX
UHF
UMTS
VCO
VGA
VHF
VoIP
VSAT
WCDMA
WiMAX
WLAN
Main and peak device realized in same push
pull transistor (2 times)
Multimedia over Coax Alliance
Metal–Oxide–Semiconductor Field Effect
Transistor
Medium Power Amplifier
Magnetic resonance imaging
Noise Figure
Network Interface Module
Nuclear magnetic resonance
Power Amplifier
Peak to Average Ratio
Peak Envelope Power
pseudomorphic High Electron Mobility
Transistor
Phase Locked Loop
Quality BiCMOS
Radio Frequency
Release for Supply
Restriction of Hazardous Substances
Receive
State Administration for Radio, Film and
Television
Serializer
Sillicon Germanium Carbon
Satellite Master Antenna Television
Surface Mounted Device
Single Pole, Double Throw
Symmetrical design of Doherty (main and peak
device are the same type of transistor)
Multiple Access
Traffic Collision Avoidance Systems
Tower Mounted Amplifier
Time to first fix
Transmit
Ultra High Frequency (470-860MHz)
Universal Mobile Telecommunications System
Voltage Controlled Oscillator
Variable Gain Amplifier
Very High Frequency (30-300MHz)
Voice over Internet Protocol
Very Small Aperture Terminal
Wideband Code Division Multiple Access
Worldwide Interoperability for Microwave
Access
Wireless Local Area Network