BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 13

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Recommended products VSAT
Outdoor unit
* = check status at 3.1 new products, as this type has not been released yet for mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Function
Function
Function
Function
Function
Function
Product highlight:
TFF1003HN
The TFF1003HN is a Ku band frequency generator intended for
low phase noise Local Oscillator (LO) circuits for Ku band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
Oscillator
Buffer
LNA2
Synth
PLL
IF
Product
Product
Product
Product
Product
Product
IF gain block
RF transistor
RF transistor
RF transistor
RF diode
MMIC
MMIC
RF IC
General purpose
SiGe:C transistor
SiGe:C transistor
SiGe:C transistor
Varicap diode
SiGe:C MMIC
SiGe:C MMIC
Wideband
wideband
amplifiers
SiGe:C IC
transistor
Package
SOT363
Package
SOT343F
SOT891
Package
SOT616
Package
SOT343R
SOT343F
Package
SOD523
Package
SOT343F
Features
`
`
`
`
Phase noise compliant with IESS-308 (Intelsat)
LO generator with VCO range from 12.8 GHz to 13.05 GHz
Input signal 50 MHz to 815 MHz
Divider settings 16, 32, 64, 128 or 256
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
Type
BFU725F/N1
BGU7003
Type
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Type
BFG424W
BFG425W
BFU725F/N1
Type
BB202
Type
BFU725F/N1
NXP Semiconductors RF Manual 14
th
edition
15