BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 30

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.6 Automotive & Industrial
Note: looking for GPS? See chapter 1.5.1 Handset.
1.6.1 Active antenna
Application diagram
Recommended products
32
Function
Function
Function
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
2
3
1
st
nd
rd
LNA
LNA
LNA
stage
stage
stage
NXP Semiconductors RF Manual 14
Product
Product
Product
RF transistor
MMIC
MMIC
MMIC
antenna
Low noise wideband
wideband amplifier
General purpose
SiGe:C transistor
SiGe:C MMIC
amplifier
th
stage
LNA
edition
1
st
Package
SOT343R
SOT343R
Package
SOT363
SOT363
SOT363
SOT363
Package
SOT343F
SOT891
stage
LNA
2
nd
stage
LNA
Type
BGA2001
BGA2003
Type
BGM1013
BGM1011
BGA2715
BGA2748
Type
BFU725F/N1
BGU7003
3
rd
Features
`
`
`
`
`
`
Low-noise, high-gain microwave MMIC
Maximum stable gain = 19 dB at 1.575 GHz
110-GHz f
Optimized performance at low (5-mA) supply current
Extemely thin, leadless 6-pin SOT891 package
Integrated biasing and shutdown for easy integration
CHIPSET
T
brb215
-Silicon Germanium technology