BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 64

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

PIN diodes : typical r
PIN diodes : typical r
PIN diodes : typical r
PIN diodes : typical r
PIN diodes : typical r
Bold = highly recommended product
Bold Red
66
^ = attenuator / switching diode
BAP55LX
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
BAP51LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
BAP64Q
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP50-02
BAP50-03
BAP50-04
BAP50-04W SOT323
BAP50-05
BAP50-05W SOT323
BAP50LX
BAP64LX^ SOD882T
Type
Type
Type
BAP70Q
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP70AM
Type
Type
= New, highly recommended product
NXP Semiconductors RF Manual 14
SOT23
SOD882T
SOD523
SOD323
SOT23
Package
SOT753
SOD523
SOD323
SOT323
SOT23
SOT363
SOD882T
SOD523
SOD323
SOT23
SOD882T
SOD882T
SOD882T
SOD523
SOD323
SOT323
SOT323
SOT323
SOT753
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
Package
Package
Package
Package
D
D
D
D
D
of diodes
Number
@ 1 mA = 2.2 - 2.4, switching diodes
@ 1 mA = 3.2 - 3.6, switching diodes
@ 1 mA = 10, attenuator/swithcing diodes
@ 1 mA = 14 - 16, attenuator diodes
@ 1 mA = 40, attenuator diodes
Number of
of diodes
Number
of diodes
Number
of diodes
diodes
Number
1
1
2
2
2
2
1
1
4
1
1
2
2
4
1
1
1
2
1
1
1
1
1
2
2
2
4
1
1
2
2
2
2
2
2
Conf
SG
SG
CC
CC
SG
SG
SR
SR
Conf
th
CC
SG
SG
SR
SR
SR
edition
Conf
Conf
Conf
SG
SG
SG
CC
CA
SG
SG
SG
SG
SG
SR
SR
CC
CC
CA
CA
SG
SG
SR
SR
SR
V
R
50
50
50
50
50
50
50
60
(V)
max
V
R
(V)
50
50
50
50
50
50
V
max
V
V
R
R
100
100
(V)
60
60
50
50
50
50
R
100
175
175
175
100
175
175
50
60
60
60
60
50
(V)
(V)
max
max
max
(mA)
max
100
50
50
50
50
50
50
50
SG = Single
SR = Series
IF
IF max
(mA)
100
100
100
100
100
100
IF max
IF max
IF max
(mA)
(mA)
100
100
100
100
100
100
100
(mA)
@ IF = 0.5 mA
50
50
50
50
50
100
100
100
100
100
100
100
100
100
typ
(Ω)
25
25
25
25
25
25
26
31
r
D
@ IF = 0.5 mA
typ
(Ω)
77
77
77
77
77
77
@ IF = 0.5 mA
r
@ IF = 0.5 mA
@ IF = 0.5 mA
D
3.3
3.4
3.4
3.4
3.3
3.3
typ
(Ω)
typ
4.9
5.5
5.5
5.5
5.5
5.5
(Ω)
max
r
typ
r
20
20
20
20
20
20
20
20
20
40
40
40
40
40
40
40
50
(Ω)
(Ω)
D
D
r
r
D
D
max
100
100
100
100
100
100
CC = Common Cathode
CA = Common Anode
@ f = 100 MHz
(Ω)
max
r
4.5
max
@ IF = 1 mA
(Ω)
(Ω)
D
max
r
5
5
5
5
5
r
9
9
9
9
9
typ
-
40
40
40
40
40
40
40
40
40
(Ω)
14
14
14
14
14
14
14
16
(Ω)
D
r
r
D
D
D
@ f = 100 MHz
@ f = 100 MHz
@ f = 100 MHz
@ IF = 1 mA
@ f = 100 MHz
@ IF = 1 mA
@ IF = 1 mA
typ
2.2
2.4
2.4
2.4
2.4
2.4
typ
3.2
3.6
3.6
3.6
3.6
3.6
@ IF = 1 mA
(Ω)
40
40
40
40
40
40
(Ω)
typ
(Ω)
max
r
r
r
typ
(Ω)
10
10
10
10
10
10
10
10
10
(Ω)
25
25
25
25
25
25
25
26
D
D
r
r
D
D
D
max
@ IF = 10 mA
max
3.3
3.6
3.6
3.6
3.6
3.6
max
(Ω)
6.5
6.5
6.5
6.5
6.5
(Ω)
50
50
50
50
50
50
(Ω)
max
r
r
typ
2.6
r
20
20
20
20
20
20
20
20
20
-
(Ω)
(Ω)
D
3
3
3
3
D
D
r
r
3
3
3
D
D
@ IF = 10 mA
@ IF = 10 mA
@ IF = 10 mA
@ IF = 10 mA
0.8
1.2
1.2
1.2
1.2
typ
5.4
5.4
5.4
5.4
5.4
5.4
typ
(Ω)
typ
1.4
1.5
1.5
1.5
1.5
(Ω)
(Ω)
max
r
1
r
2
typ
4.4
r
(Ω)
(Ω)
D
D
2
2
2
2
2
2
2
2
2
r
5
5
5
5
5
5
5
D
r
D
D
@ V
max
max
1.2
1.8
1.8
1.8
1.8
1.8
max
2.5
2.5
2.5
2.5
2.5
(Ω)
0.45
0.45
0.45
0.45
0.48
(Ω)
(Ω)
max
0 V
(pF)
r
7
7
7
7
7
7
r
3,8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
0.4
0.4
0.4
r
typ
-
(Ω)
D
C
D
r
D
D
R
d
=
@ V
= 0 V
= 0 V
0.28
0.42
0.32
0.25
@ V
@ V
= 0 V
(pF)
0.57
0.57
0.57
typ
0.4
0.4
@ V
(pF)
0.3
0.4
0.4
0.4
0.4
0.4
(pF)
typ
0.52
0.48
0.48
0.52
0.52
0.52
0.52
0.52
0.52
0.35
0.35
0.35
0.28
0.34
0.6
0.6
0.6
C
typ
0 V
(pF)
(pF)
C
@ V
0.3
0.3
0.3
typ
typ
C
C
C
d
d
d
R
d
d
R
R
R
=
R
= 1 V
0.375
0.23
0.35
0.35
0.27
0.22
(pF)
0.22
typ
(pF)
typ
0.3
0.3
0.3
0.3
0.3
0.43
0.43
0.43
@ V
0.37
0.35
0.35
0.37
0.37
0.37
0.37
0.37
0.37
0.55
0.55
0.55
C
max
(pF)
@ V
C
(pF)
(pF)
@ V
0.4
0.4
0.4
@ V
typ
0.6
0.6
0.5
0.6
typ
C
@ f = 1 MHz
C
C
-
d
d
d
d
d
R
@ f = 1 MHz
@ f = 1 MHz
R
R
R
@ f = 1 MHz
@ f = 1 MHz
= 1 V
= 1 V
= 1 V
= 1 V
0.45
0.45
0.45
0.38
max
(pF)
0.55
0.55
0.55
0.55
max
(pF)
0.4
0.22
0.35
(pF)
0.19
0.17
max
C
max
typ
(pF)
C
(pF)
0.2
-
-
0.3
0.3
0.3
-
C
C
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
d
d
d
d
d
0.275
0.18
0.25
0.25
0.21
0.16
(pF)
0.17
typ
(pF)
0.2
0.2
0.2
0.2
0.2
typ
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
(pF)
0.35
0.35
0.35
0.25
0.25
0.25
C
max
max
(pF)
(pF)
C
0.5
0.5
0.6
0.5
0.3
0.2
0.2
0.2
typ
@ V
@ V
@ V
C
@ V
C
C
d
d
d
d
d
R
R
R
R
= 20 V
= 20 V
= 20 V
= 20 V
C
C
C
@ V
0.325
0.28
0.32
0.32
0.28
0.26
0.35
0.35
0.35
0.35
d
(pF)
d
(pF)
0.3
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.25
0.25
0.25
d
(pF)
(pF)
(V)
typ
0.3
0.3
0.3
20
max
max
-
C
5
5
5
5
1
5
5
max
R
d
=