BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 48

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

C-family application information
Push-pull amplifiers
Power doublers
Optical receiver
50
Application
Optical node
Optical receiver
Distribution amplifier
Line extender amplifier
Terminating amplifier
Parameters
Power gain (dB)
Slope (dB)
Composite triple beat (dBc)
Composite 2
Noise (@ f
Total current comsumption (mA)
Frequency range (MHz)
Parameters
Power gain (dB)
Slope (dB)
Composite triple beat (dBc)
Composite 2
Noise (@ f
Total current comsumption (mA)
Frequency range (MHz)
Parameters
Responsivity (V/W)
Slope (dB)
Third order intermodulation distortion (dB)
Second order intermodulation distortion (dB)
Noise (@ f
Total current consumption (mA)
Frequency range (MHz)
Connector
NXP Semiconductors RF Manual 14
MAX
MAX
MAX
nd
nd
) (dB)
) (dB)
) pA/Sqrt (Hz)
order distortion (dBc)
order distortion (dBc)
th
edition
BGY588C
•
range
range
range
range
range
range
max.
max.
max.
max.
max.
max.
max.
max.
max.
min.
typ.
typ.
typ.
typ.
typ.
BGE788C
•
BGY588C
BGD712C
0.2 - 1.7
40 - 550
CGY888C
34.5
325
-57
-62
0.5 - 1.5
40 - 750
8
•
•
•
18.5
-62
-63
395
7
BGO807C
40 - 870
0 - 2
800
190
-54
-71
8.5
- / SCO / FCO
BGD712C
BGE788C
0.3 - 2.3
40 - 750
•
•
•
•
34.2
305
CGD944C
-49
-52
8
40 - 870
BGO807C
1 - 2
450
-66
-67
25
5
•
•
•
•
CGY888C
40 - 870
1.5 typ.
3 typ.
35.5
-64
280
-66
CGD944C
BGO807CE
CGD942C
40 - 870
•
•
•
•
0 - 2
800
190
-53
-71
8.5
BGY835C
40 - 870
1 - 2
450
-66
-67
23
40 - 870
1.5 typ.
5
CGD942C
340
-60
-55
34
7
•
•