BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 63

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

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3.2.2 PIN diodes
Why choose NXP Semiconductors’ PIN diodes:
` Broad portfolio
` Unrivalled performance
` Short leadtimes
` Low series inductance
` Low insertion loss
` Low capacitance
PIN diodes : typical r
BAP65LX
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP63LX
BAP63-02
BAP63-03
BAP63-05W
Matched
Type
BB148
BB152
BB153
BB178
BB178LX
BB182
BB182LX
BB187
BB187LX
Unmatched
BB131
BB181
BB181LX
BBY40
NEW : Pin diode selection guide on www.nxp.com/pindiodes
Type
Easy-to-use parametric filters help you to choose the
right pin diode for your design.
Package
SOD323
SOD323
SOD323
SOD523
SOD882T
SOD523
SOD882T
SOD523
SOD882T
SOD323
SOD523
SOD882T
SOT23
SOD882T
SOD523
SOD323
SOT23
SOT323
SOD882T
SOD523
SOD323
SOT323
Package
D
2.361
2.361
@ 1 mA ≤ 2, switching diodes
min
(pF)
2.48
2.36
2.48
2.48
2.57
2.57
Number of
2.4
0.7
0.7
0.7
4.3
C
d
diodes
1
1
1
2
2
1
1
1
2
(pF)
2.75
2.75
typ
2.6
2.7
2.6
2.6
2.6
2.7
2.7
C
-
-
-
-
d
2.754
2.754
1.055
1.055
1.055
max
(pF)
2.75
2.89
2.75
2.89
2.89
2.92
2.92
Conf
C
SG
SG
SG
CC
CC
SG
SG
SG
CC
6
d
@ V
(V)
28
28
28
28
28
28
28
25
25
28
28
28
25
=
V
R
R
30
30
30
30
30
50
50
50
50
@ f = 1 MHz
(V)
max
20.6
20.6
C
min
14.5
13.5
13.5
13.5
C
12
12
11
11
5
d1
-
-
d2
/
IF max
(mA)
100
100
100
100
100
100
100
100
100
C
typ
C
15
22
15
15
15
22
22
14
d1
-
-
-
-
-
d2
/
@ IF = 0.5 mA
typ
2.3
2.5
2.5
2.5
(Ω)
max
C
r
-
-
-
-
-
C
6.5
D
16
16
d1
-
-
-
-
-
-
-
-
-
-
d2
/
max
3.3
3.5
3.5
3.5
(Ω)
@ V
r
-
-
-
-
-
(V)
0.5
0.5
0.5
D
=
1
1
1
1
1
1
1
2
2
3
1
@ f = 100 MHz
(fF)
Isolation
C
0.94
1.87
1.95
1.95
1.95
@ IF = 1 mA
typ
d
(Ω)
(dB)
@ V
r
1
1
1
1
(V)
28
28
28
28
28
28
28
25
25
28
28
28
25
700
600
500
400
300
200
100
D
=
25
20
15
10
0
5
0
10
10
2
Look for more graphs showing the Pin diode line-up at other
frequencies on our web site: www.nxp.com/pindiodes
−1
−2
max
(Ω)
0.65
0.65
r
3
3
3
3
typ
-
-
-
-
-
(Ω)
0.7
D
r
1
1
1
2
-
-
-
-
-
-
s
BAP65LX
BAP65LX
@ IF = 10 mA
0.49
0.56
0.56
0.56
0.56
1.19
1.17
1.17
1.17
typ
(Ω)
max
0.75
0.75
r
BAP1321LX
(Ω)
0.9
1.2
0.8
0.8
1.2
0.7
BAP142LX
BAP142LX
D
r
BAP1321LX
3
3
-
-
-
NXP Semiconductors RF Manual 14
s
BAP63LX
BAP63LX
BAP64LX
BAP64LX
BAP51LX
BAP51LX
10
max
0.9
0.9
0.9
0.9
0.9
1.8
1.8
1.8
1.8
1
(Ω)
(MHz)
−1
@ f =
r
100
100
100
100
100
100
200
BAP50LX
470
470
470
470
470
470
D
BAP65LX
BAP50LX
BAP65LX
BAP1321LX
BAP63LX
= 0 V
0.65
0.65
0.34
0.36
0.61
@ V
(pF)
0.7
0.7
0.4
0.4
typ
BAP63LX
C
BAP142LX
@ C
BAP1321LX
(pF)
d
30
30
30
30
30
30
25
12
=
9
9
9
-
-
R
BAP142LX
BAP51LX
d
BAP70-20
Freq = 1800 MHz, Isolation @ V
BAP51LX
0.575
0.575
BAP70-02
0.48
0.55
0.55
0.29
0.32
0.35
0.35
(pF)
typ
@ V
C
∆C
d
C
Freq = 100 MHz, C
2
2
2
2
2
2
2
2
2
10
-
-
-
-
1
Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
d
rD @ 0.5 mA
d
R
@ f = 1 MHz
/
= 1 V
BAP64LX
0.85
max
Insertion Loss (dB)
(pF)
0.9
0.9
0.9
0.9
C
BAP64LX
-
-
-
-
@ V
BAP50LX
d
(V)
0.5
=
1
1
1
1
1
1
2
2
-
-
-
-
r
D
BAP50LX
th
1
BAP70-02
(Ω)
edition
d
0.425
0.425
0.375
0.375
rD @ 10 mA
0.37
0.24
0.25
0.27
(pF)
@ V
0.3
typ
C
BAP70-02
@ V
@ V
d
(V)
R
28
28
28
28
28
28
28
25
25
R
=
-
-
-
-
= 0 V
brb407
= 0 V
brb408
R
2
10
= 20 V
10
C
2
0.32
0.32
0.35
d
(pF)
0.3
@ N
-
-
-
-
-
max
10
10
10
10
10
10
10
10
=
5
-
-
-
-
65
s