BLF6G10LS-200RN:11 NXP Semiconductors, BLF6G10LS-200RN:11 Datasheet
BLF6G10LS-200RN:11
Specifications of BLF6G10LS-200RN:11
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BLF6G10LS-200RN:11 Summary of contents
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... BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin BLF6G10-200RN (SOT502A BLF6G10LS-200RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10-200RN BLF6G10LS-200RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G10-200RN_10LS-200RN_2 Product data sheet Pinning ...
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... L(AV IRL η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 894 MHz. BLF6G10-200RN_10LS-200RN_2 Product data sheet Thermal characteristics Parameter Conditions ...
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... NXP Semiconductors 7.2 One-tone CW Fig 1. 7.3 Two-tone (dB) 19 η 120 1400 mA 881 MHz (±100 kHz Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G10-200RN_10LS-200RN_2 Product data sheet (dB) 19 η 1400 mA 881 MHz One-tone CW power gain and drain efficiency as function of load power; ...
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... NXP Semiconductors 7.4 2-carrier W-CDMA (dB η 1400 mA 881 MHz (±5 MHz carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values 8. Test information input 50 Ω The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz ...
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... C13, C14 multilayer ceramic chip capacitor C15 multilayer ceramic chip capacitor C17, C18 electrolytic capacitor L1 ferrite SMD bead Q1 BLF6G10LS-200RN R1, R2, R3 SMD resistor [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-200RN_10LS-200RN_2 Product data sheet C3 Q1 ...
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... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION ...
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... NXP Semiconductors Earless flanged LDMOST ceramic package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 9. ...
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... NXP Semiconductors 10. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-200RN_10LS-200RN_2 20100121 Modifications BLF6G10-200RN_10LS-200RN_1 20090119 BLF6G10-200RN_10LS-200RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 7.2 One-tone 7.3 Two-tone 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline ...