BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 11

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Outdoor unit
Function
Function
Function
Function
Function
MPA (medium
Product highlight:
medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a low-
cost ultra small SOT908 leadless package. It delivers 25 dBm output
power at 1 dB gain compression and a superior performance for
various narrowband-tuned application circuits for frequencies up to
2700 MHz.
(variable gain
amplifier)
amplifier)
VGA 1
power
LNA 2
Buffer
IF 1
Product
Product
Product
Product
Product
IF gain block
RF transistor
RF transistor
MMIC
MMIC
MMIC
MMIC
wideband
amplifiers
transistor
transistor
purpose
General
SiGe:C
SiGe:C
SiGe:C
SiGe:C
SiGe:C
SiGe:C
MMIC
MMIC
MMIC
MMIC
MMIC
SOT891
Package
SOT363
Package
SOT617
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
Package
SOT343F
Package
SOT343F
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
Type
BFU725F/N1
Type
BFU725F/N1
BGU7003
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
Type
BGA7202*
BGA7203*
BGA7204*
Type
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Features
`
`
`
`
`
`
`
Function
Function
Function
Function
(variable gain
Oscillator
400 MHz to 2700 MHz frequency operating range
16 dB small signal gain at 2 GHz
27 dBm output power at 1 dB gain compression
Integrated active biasing
3.3 V / 5 V single supply operation
Simple quiescent current adjustment
1 μA shutdown mode
amplifier)
VGA 2
Synth
PLL
Product
Product
Product
Product
RF transistor
RF diode
MMIC
RF IC
NXP Semiconductors RF Manual 14
Wideband
SiGe:C IC
transistor
transistor
Varicap
SiGe:C
SiGe:C
MMIC
diode
Package
SOT617
Package
SOT616
Package
SOT343R
SOT343F
Package
SOD523
th
edition
Type
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
Type
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Type
BFG424W
BFG425W
BFU725F/N1
Type
BB202
13