BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.1 Mobile Communication Infrastructure
1.1.1 Base stations (all cellular standards and frequencies)
See also brochure: 'Your partner in Mobile Communication Infrastructure design': document number: 9397 750 16837.
Application diagram
Above diagram shows a simplified base station block diagram with its two main branches: transmit (upper half, TX) and receive (lower half, RX).
Walking along the transmit branch, after the interfacing into the signal processing part, one first encounters the digital to analog converters (DAC), which include a
serial interface in our case (SER). The transmit signal then passes a low-pass filter block (LPF) and is being upconverted in the IQ mixer stage. Next follows a variable
gain amplifier (VGA), a bandpass filter (TX BPF) and the power amplifier board with a medium power amplifier- (MPA) and the high power amplifier (HPA)stages.
An isolater and duplexer are the last two basic blocks up to the antenna. A feedback line is provided to monitor the transmitted signal. The TX signal is “sampled”,
down-converted in a mixer, amplified (VGA), bandpassfiltered (BPF) and converted to digital by an analog to digital converter (SER ADC), with a high speed serial
interface.
The main RX branch of the base station starts at the duplexer, is amplified by a low noise amplifier (LNA) and band pass filtered (RX BPF) very close to the antenna in
a “tower mounted amplifier”. A further amplifier (LNA) then feeds into the down conversion mixer; the I and Q base band signals are further amplified (VGA) and via
a low pass filter (LPF) fed into the respective ADC’s (SER I-ADC and SER Q-DAC).
The serial interface in turn connects to the base band signal processing unit. The synchronizing “heartbeats” in the diagram are controlled by phase locked loops
(PLL) with or without a voltage controlled oscillator (VCO). Microcontrollers (μC) provide local control and monitoring functions within the building blocks.
The colored building blocks can all be sourced by NXP and are discussed in the following paragraphs.
PROCESSING
SIGNAL
SER Q-DAC
SER Q-ADC
SER I-DAC
SER I-ADC
PLL
SER ADC
PLL
µC
PLL VCO
BPF
LPF
LPF
LPF
LPF
PLL VCO
PLL VCO
IQ MIXER
VGA
VGA
VGA
MIXER
MIXER
0
90
IQ MIXER
MIXER
MIXER
mixer
0
90
VGA
TX BPF
LNA
NXP Semiconductors RF Manual 14
MPA
AMPLIFIER
RX BPF
MOUNTED
Processing
RF small signal
RF POWER BOARD
TOWER
µC
HPA
LNA
ISOLATOR
DUPLEXER
Dataconverters
RF power
th
edition
ANTENNA
TX/RX
brb411
9