BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 43

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

leading portfolio for satellite LNB. They join the other
discrete products, including oscillators, amplifiers, switches,
and biasing, to provide complete coverage for all LNB
architectures.
Since the transistor and the MMICs are manufactured in NXP’s
industry-leading QUBiC4X SiGe:C and QuBiC4+ process,
Satellite outdoor unit, LNB for multiple users
NOTE: Also look at chapter 1.4.4 satellite outdoor unit.
Quick reference satellite IF gain MMICs
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
Type
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
horizontal
antenna
antenna
vertical
(V)
3.3
3.3
3.3
3.3
5.0
5.0
5.0
V
stage
stage
LNA
LNA
s
1
1
st
st
BIAS IC
@
stage
stage
LNA
LNA
(mA)
2
2
12.4
16.4
19.6
22.7
15.4
9.7
7.7
nd
nd
I
s
stage
stage
LNA
LNA
3
3
rd
rd
@-3dB
(GHz)
3.0
2.3
2.6
>3
>3
>3
>3
F
u
mixer
high
low
(dB)
mixer
mixer
NF
mixer
3.4
3.6
3.4
2.8
3.9
3.7
3.6
oscillator
oscillator
@ 1 GHz
Gain
they offer better overall RF performance and are more robust
than their GaAs equivalents for the lowest cost. The process
technology also enables higher integration, for added features.
NXP owns the industrial base for production (wafer fab, test,
assembly), so volume supplies can be assured.
(dB)
20.2
25.4
23.3
23.4
22.1
31.2
31.9
IF amplifier
IF amplifier
IF amplifier
IF amplifier
H high
V high
H low
V low
(dBm)
OIP3
18.2
11.5
13.6
16.1
20.9
17.7
8.7
SWITCH
(4 x 2)
IF
(MHz)
NXP Semiconductors RF Manual 14
250
20.0
22.3
26.2
32.0
23.0
22.9
31.2
(MHz)
amplifier
amplifier
950
20.2
25.4
31.2
23.2
23.3
22.1
31.8
Gain (dB) @
IF
IF
IF out 1
IF out 2
brb022
(MHz)
1550
20.6
23.0
25.5
30.6
23.9
32.6
24.0
th
edition
(MHz)
2150
20.6
23.8
25.8
28.7
24.0
31.4
24.3
45