DP83865DVH National Semiconductor, DP83865DVH Datasheet - Page 75

10/100/1000BASE-T TRANSCEIVER, SMD

DP83865DVH

Manufacturer Part Number
DP83865DVH
Description
10/100/1000BASE-T TRANSCEIVER, SMD
Manufacturer
National Semiconductor
Datasheets

Specifications of DP83865DVH

Data Rate
1000Mbps
No. Of Ports
1
Ethernet Type
IEEE 802.3u, IEEE 802.3z
Supply Current
430µA
Supply Voltage Range
2.375V To 2.625V, 3.135V To 3.465V
Operating Temperature Range
0°C To +70°C
Interface Type
GMII, MII, RGMII
Rohs Compliant
Yes
Leaded Process Compatible
No
Peak Reflow Compatible (260 C)
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
6.0 Electrical Specifications
6.4.2 GMII Receive Timing
T15
T16
T17
T18
Note 1: t
Note 2: t
Note 3: t
Note 4: GMII Receiver input template measured with “GMII point-to-point test circuit”, see Test Conditions Section.
Note 5: Guaranteed by design. Not tested.
Parameter
RXD[7:0]
RX_CLK
RX_DV
RX_ER
r
delay max
delay min
MDI
and t
f
are measured from V
RX_CLK Duty Cycle
RX_CLK t
MDI to GMII latency
is measured from clock level of 1.9V to data level of 1.9V for data = ‘1’; and clock level = 1.9V to.data level 0.7V for data = ‘0’.
is measured from clock level of 0.7V to data level of 1.9V for data = ‘1’; and clock level = 0.7V to.data level 0.7V for data = ‘0’.
RX_CLK to RXD, RX_DV and RX_ER delay
R
/t
F
Begin of Frame
IL_AC(MAX)
T18
T15
T16
= 0.7V to V
(Continued)
Description
IH_AC(MIN)
T17
Valid Data
= 1.9V.
75
Note 2, 3, 4
Note 1, 4, 5
T17
Notes
Min
0.5
40
Typ Max
384
5.5
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60
1
Units
ns
ns
ns
%

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