MB9BF104RPMC-GE1 Fujitsu Semiconductor America Inc, MB9BF104RPMC-GE1 Datasheet - Page 89

• Manufacturer Part Number: MB9BF104RPMC-GE1
• Description: IC MCU 32BIT 256KB FLASH 120LQFP
• Manufacturer: Fujitsu Semiconductor America Inc
• Series: FM3 MB9B100r

Specifications of MB9BF104RPMC-GE1

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CSIO, EBI/EMI, I²C, LIN, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 100
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 120-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: 865-1117

*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature
DS706-00007-1v0-E
Sector erase
time
Half word (16 bit)
write time
Chip erase time
Erase/write cycles and data hold time
 Flash Memory Write/Erase Characteristics
measurements into normalized value at + 85C) .
Erase/write cycles
Parameter
100,000
(cycle)
10,000
1,000
Large Sector
Small Sector
Min
-
-
-
Data hold time
Value
Typ
(year)
0.6
0.3
7.2
25
20 *
10 *
5 *
Max
37.6
400
1.6
3.1
Value
μs
s
s
(Vcc = 2.7V to 5.5V, Ta = - 40C to + 85C)
Excludes write time prior to internal
erase
Not including system-level overhead
time.
Excludes write time prior to internal
erase
MB9B100 Series
Remarks
Remarks
89