MB9BF104RPMC-GE1 Fujitsu Semiconductor America Inc, MB9BF104RPMC-GE1 Datasheet - Page 48

• Manufacturer Part Number: MB9BF104RPMC-GE1
• Description: IC MCU 32BIT 256KB FLASH 120LQFP
• Manufacturer: Fujitsu Semiconductor America Inc
• Series: FM3 MB9B100r

Specifications of MB9BF104RPMC-GE1

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CSIO, EBI/EMI, I²C, LIN, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 100
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 120-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: 865-1117

48
MB9B100 Series
 C Pin
 Mode pins (MD0, MD1)
 Notes on power-on
 Serial Communication
 Differences in features among the products with different memory sizes and
between FLASH products and MASK products
As this series includes an internal regulator, always connect a bypass capacitor of approximately 4.7 µF to
the C pin for use by the regulator.
Connect the MD pin (MD0, MD1) directly to VCC or VSS pins. Design the printed circuit board such that
the pull-up/down resistance stays low, as well as the distance between the mode pins and VCC pins or VSS
pins is as short as possible and the connection impedance is low, when the pins are pulled-up/down such as
for switching the pin level and rewriting the Flash memory data. It is because of preventing the device
erroneously switching to test mode due to noise.
Turn power on/off in the following order or at the same time.
If not using the A/D converter, connect AVCC =VCC and AVSS = VSS.
There is a possibility to receive wrong data due to the noise or other causes on the serial communication.
Therefore, design a printed circuit board so as to avoid noise.
Consider the case of receiving wrong data due to noise, perform error detection such as by applying a
checksum of data at the end. If an error is detected, restransmit the data.
The electric characteristics including power consumption, ESD, latch-up, noise characteristics, and
oscillation characteristics among the products with different memory sizes and between FLASH products
and MASK products are different because chip layout and memory structures are different.
If you are switching to use a different product of the same series, please make sure to evaluate the electric
characteristics.
Turning on : VCC  AVCC  AVRH
Turning off : AVRH  AVCC  VCC
Device
VSS
C
GND
4.7μF
DS706-00007-1v0-E