MB9BF104RPMC-GE1 Fujitsu Semiconductor America Inc, MB9BF104RPMC-GE1 Datasheet - Page 64

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MB9BF104RPMC-GE1

Manufacturer Part Number
MB9BF104RPMC-GE1
Description
IC MCU 32BIT 256KB FLASH 120LQFP
Manufacturer
Fujitsu Semiconductor America Inc
Series
FM3 MB9B100r

Specifications of MB9BF104RPMC-GE1

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
80MHz
Connectivity
CSIO, EBI/EMI, I²C, LIN, UART/USART
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
100
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
120-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
865-1117
64
MB9B100 Series
Input frequency
Input clock cycle
Input clock pulse
width
Clock frequency
Clock frequency
(2) Sub Clock Input Characteristics
(3) Built-in CR Oscillation Characteristics
Parameter
Parameter
Parameter
・ Built-in high-speed CR
・ Built-in low-speed CR
X0A
0.8×Vcc
Symbol
Symbol
Symbol
F
t
F
F
CYLL
CRH
CRL
CL
-
name
- 40C to + 85C
- 40C to + 85C
X0A
X1A
Pin
0C to + 70C
Conditions
Ta = + 25C
Conditions
Ta =
Ta =
Ta =
P
Conditions
P
P
W H
-
WH
WL
/t
/t
-
-
-
CYLL
CYLL
t
CYLL
Min
Min
3.92
3.84
3.8
50
0.8×Vcc
3
Min
32
10
45
(Vcc = 2.7V to 5.5V, Vss = 0V Ta = - 40C to + 85C)
-
(Vcc = 2.7V to 5.5V, Vss = 0V Ta = - 40C to + 85C)
(Vcc = 2.7V to 5.5V, Vss = 0V Ta = - 40C to + 85C)
0.2×Vcc
Value
Value
Typ
Typ
100
Value
32.768
4
4
4
4
P
Typ
-
-
-
WL
Max
Max
4.08
4.16
150
4.2
5
31.25
Max
100
55
-
MHz
Unit
Unit
kHz
Unit
kHz
kHz
μs
%
When trimming
When trimming
When not trimming
0.8×Vcc
0.2×Vcc
DS706-00007-1v0-E
When crystal
oscillator is
connected
When using
external clock
When using
external clock
When using
external clock
Remarks
Remarks
Remarks

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