FSBB15CH60C Fairchild Semiconductor, FSBB15CH60C Datasheet - Page 8

• Manufacturer Part Number: FSBB15CH60C
• Description: IC POWER MOD SPM 600V SPM27CC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB15CH60C

• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27CC
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 55W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Case Height: 5.5mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

years, attempting to reduce power loss through excessively fast switching speed has given rise to various
challenges.
challenges such as large EMI (Electromagnetic Interference), excessive surge voltage, and high magnitude
of motor leakage current. Such problems increase system cost and can even shorten motor life. Mini DIP
SPM series solve these problems by adjusting the switching dV/dt to around 3kV/μsec through advanced
gate drive impedance design.
optimized switching speed meeting the low EMI requirement has been realized in Mini DIP SPM while
keeping the total power loss at a low level equal to or less than other low power modules.
general industrial inverters and even in consumer appliance inverters, there is a growing need to measure
inverter phase current. Mini DIP SPM family has a 3-N terminal structure in which IGBT inverter bridge
emitter terminal is separated. In this type of structure, inverter phase current can be easily detected simply
by using external shunt resistance.
2008-03-03
Noise Reduction
Cost-effective Current Detection
Figure 1.2 Junction-to-case Thermal Resistance according to Current Rating of Mini DIP SPM Line-up
Small package and low power loss are the primary goals of low power modules. However, in recent
As sensor-less vector control and other increasingly sophisticated control methods are applied to
Thanks to very low on-state voltage of the new generation IGBT and low forward voltage of FRD, an
Excessive switching speed increases the dV/dt, di/dt, and recovery current and creates
V4 Mini DIP SPM Application Note (2008-03-03)
8
FAIRCHILD SEMICONDUCTOR - Smart Power Module