FSBB15CH60C Fairchild Semiconductor, FSBB15CH60C Datasheet - Page 47

• Manufacturer Part Number: FSBB15CH60C
• Description: IC POWER MOD SPM 600V SPM27CC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB15CH60C

• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27CC
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 55W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Case Height: 5.5mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9.2.2 Measurement Method
be measured directly, the only unknown constant is the junction temperature, T
(ETM) is widely used to measure the junction temperature. The ETM is a test method using the relationship
between forward drop voltage and junction temperature. This relationship is an intrinsic electro-thermal
property of semiconductor junctions, and is characterized by a nearly linear relationship between the
forward-biased drop voltage and the junction temperature, when a constant forward-biased current (sense
current) is applied. This voltage drop of the junction is called Temperature Sensitive Parameter (TSP). Figure
9.3 illustrates the concept of measuring the voltage drop vs. junction temperature relationship for a diode
junction. The device under test (DUT) is embedded in hot fluid to heat DUT up to desired temperatures.
2008-03-03
8
7
6
5
4
3
2
1
0
1E-6
During the thermal resistance test, T
1E-5
Z
1E-4
th(J-C)_IGBT
1E-3
Pulse Duration [sec]
Figure 9.3 Illustration of the bath method for TSP measurement
0.01
0.1
Figure 9.2 Normalized Thermal impedance curves.
attached to case
Thermocouple
1
10
100
j
, T
(d) FSBF3CH60B
c
(or T
V4 Mini DIP SPM Application Note (2008-03-03)
a
) and P
47
FAIRCHILD SEMICONDUCTOR - Smart Power Module
Measure
Voltage
Heater
Current
Sense
8
7
6
5
4
3
2
1
0
1E-6
Device
Dielectic Bath
D
should be measured. Since T
1E-5
Z
th(J-C)_FRD
1E-4
Stirred
1E-3
Pulse Duration [sec]
0.01
j
. The Electrical Test Method
0.1
1
10
c
, T
100
a
and P
D
can