DF2161BVTE10 Renesas Electronics America, DF2161BVTE10 Datasheet - Page 765

• Manufacturer Part Number: DF2161BVTE10
• Description: MCU 3V 128K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2161BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 114
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2161BVTE10; HD64F2161BVTE10

Table 27.4 Bus Drive Characteristics
Conditions: V
Applicable Pins: SCL1, SCL0, SDA1, SDA0 (bus drive function selected)
Item
Schmitt trigger
input voltage
Input high voltage
Input low voltage
Output low voltage
Input capacitance
Three-state leakage
current (off state)
SCL, SDA output
fall time
CC
= 2.7 V to 3.6 V, V
Symbol
V
V
V
V
V
V
C
| I
t
Of
T
T
T
IH
IL
OL
in
TSI
–
+
+
– V
|
Figure 27.2 LED Drive Circuit (Example)
T
–
Min
V
—
V
V
–0.5
—
—
—
—
20 + 0.1Cb —
This LSI
CC
CC
CC
SS
Ports 1 to 3
0.3
0.05
0.7
= 0 V, Ta = –20 to +75°C
Typ
—
—
—
—
—
—
—
—
—
Max
—
V
—
5.5
V
0.5
0.4
20
1.0
250
LED
Rev. 3.00 Mar 21, 2006 page 709 of 788
CC
CC
0.7
0.3
Section 27 Electrical Characteristics
600
Unit
V
V
V
pF
µA
ns
Test Conditions
V
V
V
V
V
I
I
V
T
V
V
OL
OL
a
CC
CC
CC
CC
CC
in
in
CC
= 25°C
= 8 mA
= 3 mA
= 0 V, f = 1 MHz,
= 0.5 to V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
REJ09B0300-0300
CC
– 0.5 V