R4F24268NVFQV Renesas Electronics America, R4F24268NVFQV Datasheet - Page 306

• Manufacturer Part Number: R4F24268NVFQV
• Description: MCU 256K FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24268NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.8.15
When burst mode is selected on the synchronous DRAM interface, the DACK and EDACK output
timing can be selected with the DDS and EDDS bits in DRAMCR. When continuous synchronous
DRAM space is accessed in DMAC/EXDMAC single address mode at the same time, these bits
select whether or not burst access is to be performed. The establishment time for the read data can
be extended in the clock suspend mode irrespective of the settings of the DDS and EDDS bits.
(1) Output Timing of DACK or EDACK
When DDS = 1 or EDDS = 1: Burst access is performed by determining the address only,
irrespective of the bus master. With the synchronous DRAM interface, the DACK or EDACK
output goes low from the T
Figure 6.72 shows the DACK or EDACK output timing for the synchronous DRAM interface
when DDS = 1 or EDDS = 1.
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DMAC and EXDMAC Single Address Transfer Mode and Synchronous DRAM
Interface
c1
state.
H8S/2426, H8S/2426R, H8S/2424 Group
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010