R4F24268NVFQV Renesas Electronics America, R4F24268NVFQV Datasheet - Page 294

MCU 256K FLASH 48K 144-LQFP

R4F24268NVFQV

Manufacturer Part Number
R4F24268NVFQV
Description
MCU 256K FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet

Specifications of R4F24268NVFQV

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24268NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
R4F24268NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
Page 264 of 1372
(Address shift size set to 8 bits)
Figure 6.63 Example of DQMU and DQML Byte Control
This LSI
Notes: 1. Bank control is not available.
CS5 (SDRAMφ)
UCAS (DQMU)
LCAS (DQML)
2. The CKE and CS pins must be fixed to 1 when the power supply is input.
3. The CS pin must be fixed to 0 before accessing synchronous DRAM.
D15 to D0
CS2 (RAS)
CS3 (CAS)
I/O PORT
CS4 (WE)
OE (CKE)
A23
A21
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
16-Mbit synchronous DRAM
1 Mword × 16 bits × 4-bank configuration
8-bit column address
DQMU
RAS
CAS
WE
A13 (BS1)
A12 (BS0)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ15 to DQ0
CKE
CS
CLK
DQML
H8S/2426, H8S/2426R, H8S/2424 Group
address: A13/A12
input: A11 to A0
Column address
input: A7 to A0
Row address
Bank select
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010

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