D6417709SHF200BV Renesas Electronics America, D6417709SHF200BV Datasheet - Page 333

• Manufacturer Part Number: D6417709SHF200BV
• Description: IC SUPER H MPU ROMLESS 208LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of D6417709SHF200BV

• Core Processor: SH-3
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, FIFO, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 96
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.85 V ~ 2.15 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 208-QFP Exposed Pad, 208-eQFP, 208-HQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Single Write: The basic timing chart for write access is shown in figure 10.18. In a single write
operation, following the Tr cycle in which ACTV command output is performed, a WRITA
command that performs auto-precharge is issued in the Tc1 cycle. In the write cycle, the write
data is output at the same time as the write command. In case of the write with auto-precharge
command, precharging of the relevant bank is performed in the synchronous DRAM after
completion of the write command, and therefore no command can be issued for the same bank
until precharging is completed. Consequently, in addition to the precharge wait cycle, Tpc, used in
a read access, cycle Trwl is also added as a wait interval until precharging is started following the
write command. Issuance of a new command for the same bank is deferred during this interval.
The number of Trwl cycles can be specified by the TRWL bits in MCR.
Rev. 5.00, 09/03, page 287 of 760