HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 626

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Item
Erase
Notes: *1 Set the times according to the program/erase algorithms.
594
*2 Programming time per 32 bytes (Shows the total period for which the P-bit in FLMCR1
*3 Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
*4 Maximum programming time (tP (max) = wait time after P-bit setting (z)
*5 Number of times when the wait time after P-bit setting (z) = 150 s or 500 s.
*6 Maximum erase time (tE (max) = Wait time after E-bit setting (z)
*7 Number of times when the wait time after E-bit setting (z) = 10 ms.
Set the wait time after P-bit setting (z) to the minimum value of 150 s when the write
The number of erases should be set according to the actual set value of z to allow
is set. It does not include the programming verification time.)
not include the erase verification time.)
programming count (N))
counter in the 32-byte write algorithm is between 1 and 4.
The number of writes should be set according to the actual set value of (z) to allow
programming within the maximum programming time (tP).
count (N))
erasing within the maximum erase time (tE).
Wait time after
SWE-bit setting
Wait time after
ESU-bit setting
Wait time after
E-bit setting
Wait time after
E-bit clear
Wait time after
ESU-bit clear
Wait time after
EV-bit setting
Wait time after
dummy write
Wait time after
EV-bit clear
Maximum erase
count
*1, *6, *7
*1
*1
* 1, *6
*1
*1
*1
*1
*1
Symbol
x
y
z
N
Min
10
200
5
10
10
20
2
5
—
Typ
—
—
—
—
—
—
—
—
—
Max
—
—
10
—
—
—
—
—
120
Unit
ms
Times
s
s
s
s
s
s
s
maximum erase
maximum
Test
Condition
tE = 10 ms