HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 540

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

21.2
21.2.1
Note: The FLSHE bit in WSCR must be set to 1 in order for this register to be accessed.
FLMCR1 is an 8-bit register that controls the flash memory operating modes. Program-verify
mode or erase-verify mode is entered by setting SWE to 1. Program mode is entered by setting
SWE to 1 when FWE = 1, then setting the PSU bit in FLMCR2, and finally setting the P bit. Erase
mode is entered by setting SWE to 1, then setting the ESU bit in FLMCR2, and finally setting the
E bit. FLMCR1 is initialized to H'80 by a reset, and in hardware standby mode and software
standby mode. When on-chip flash memory is disabled, a read will return H'00, and writes are
invalid.
Writes to bits EV and PV in FLMCR1 are enabled only when SWE = 1; writes to the E bit only
when FWE = 1, SWE = 1, and ESU = 1; and writes to the P bit only when SWE = 1 and PSU = 1.
Bit 7—Flash Write Enable (FWE): Controls programming and erasing of on-chip flash memory.
In the H8/3437SF, this bit cannot be modified and is always read as 1.
Bit 6—Software Write Enable (SWE): Enables or disables the flash memory. This bit should be
set before setting bits ESU, PSU, EV, PV, E, P, and EB7 to EB0, and should not be cleared at the
same time as these bits.
Bit 6: SWE
0
1
Bits 6 to 4—Reserved: These bits cannot be modified and are always read as 0.
508
Bit
Initial value
Read/Write
Flash Memory Register Descriptions
Flash Memory Control Register 1 (FLMCR1)
FWE
Description
Writes disabled
Writes enabled
7
1
R
SWE
R/W
6
0
—
—
5
0
—
—
4
0
R/W
EV
3
0
R/W
PV
2
0
R/W
1
E
0
(Initial value)
R/W
0
P
0