HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 413

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HD64F3437TFI16V

Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HD64F3437TFI16V

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
HD64F3437TFI16V
Manufacturer:
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HD64F3437TFI16V
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Bits 7 to 4—Reserved: These bits cannot be modified, and are always read as 1.
Bits 3 to 0—Large Block 3 to 0 (LB3 to LB0): These bits select large blocks (LB3 to LB0) to be
programmed and erased.
Bits 3 to 0:
LB3 to LB0
0
1
19.2.3
EBR2 is an 8-bit register that designates small flash-memory blocks for programming and erasure.
EBR2 is initialized to H'00 by a reset, in the standby modes, and when 12 V is not applied to FV
pin. When a bit in EBR2 is set to 1, the corresponding block is selected and can be programmed
and erased. Figure 19.2 and table 19.6 show a block map.
Note: * The initial value is H'00 in modes 2 and 3 (on-chip ROM enabled). In mode 1 (on-chip ROM
Bits 7 to 0—Small Block 7 to 0 (SB7 to SB0): These bits select small blocks (SB7 to SB0) to be
programmed and erased.
Bits 7 to 0:
SB7 to SB0
0
1
Bit
Initial value*
Read/Write
disabled), this register cannot be modified and always reads H'FF. For information on
accessing this register, refer to in section 19.7, Flash Memory Programming and Erasing
Precautions (11).
Erase Block Register 2 (EBR2)
R/W*
SB7
Description
Block (LB3 to LB0) is not selected
Block (LB3 to LB0) is selected
Description
Block (SB7 to SB0) is not selected
Block (SB7 to SB0) is selected
7
0
R/W*
SB6
6
0
R/W*
SB5
5
0
R/W*
SB4
4
0
R/W*
SB3
3
0
R/W*
SB2
2
0
R/W*
SB1
1
0
(Initial value)
(Initial value)
R/W*
SB0
0
0
381
PP

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