MC9S12NE64VTUE Freescale Semiconductor, MC9S12NE64VTUE Datasheet - Page 512

• Manufacturer Part Number: MC9S12NE64VTUE
• Description: IC MCU 64K FLASH EEPROM 80-TQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12NE64VTUE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: EBI/EMI, Ethernet, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.375 V ~ 3.465 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 80-TQFP Exposed Pad, 80-eTQFP, 80-HTQFP, 80-VQFP
• Processor Series: S12N
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 125 MHz
• Number Of Programmable I/os: 70
• Number Of Timers: 4
• Operating Supply Voltage: - 0.3 V to + 3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: EVB9S12NE64E, DEMO9S12NE64E
• Minimum Operating Temperature: - 65 C
• On-chip Adc: 10 bit, 8 Channel
• Cpu Family: HCS12
• Device Core Size: 16b
• Frequency (max): 25MHz
• Total Internal Ram Size: 8KB
• # I/os (max): 70
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 2.625/3.465V
• Operating Supply Voltage (min): 2.357/2.375/3.135V
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 105C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 80
• Package Type: TQFP
• For Use With: EVB9S12NE64E - BOARD EVAL FOR 9S12NE64DEMO9S12NE64E - DEMO BOARD FOR 9S12NE64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Appendix A Electrical Characteristics
A.11
This section describes the characteristics of the analog-to-digital converter.
A.11.1
Table 18-27 shows conditions under which the ATD operates.
The following constraints exist to obtain full-scale, full range results:
V
beyond the power supply levels that it ties to. If the input level goes outside of this range it will effectively
be clipped.
A.11.2
Three factors — source resistance, source capacitance, and current injection — have an influence on the
accuracy of the ATD.
A.11.2.1
Due to the input pin leakage current as specified in
there will be a voltage drop from the signal source to the ATD input. The maximum source resistance R
specifies results in an error of less than 1/2 LSB (2.5 mV) at the maximum leakage current. If device or
operating conditions are less than worst case or leakage-induced error is acceptable, larger values of source
resistance are allowed.
512
SSA
1
Conditions are shown in
Num C
The minimum time assumes a final sample period of 2 ATD clocks cycles while the maximum time assumes a final sample
period of 16 ATD clocks.
1
2
3
4
5
6
7
≤ V
D Reference Potential
C Differential Reference Voltage
D ATD Clock Frequency
D ATD 10-Bit Conversion Period
D ATD 8-Bit Conversion Period
D Recovery Time (V
P
RL
ATD Electrical Characteristics
ATD Operating Characteristics — 3.3 V Range
Factors Influencing Accuracy
Reference Supply current
≤ V
Source Resistance
Conv, Time at 2.0 MHz ATD Clock f
Conv, Time at 2.0 MHz ATD Clock f
IN
≤ V
Table A-4
RH
DDA
≤ V
Rating
Table 18-27. 3.3V ATD Operating Characteristics
= 3.3 V)
DDA
unless otherwise noted; Supply Voltage 3.3 V-10% <= V
. This constraint exists since the sample buffer amplifier can not drive
MC9S12NE64 Data Sheet, Rev. 1.1
Clock Cycles
Clock Cycles
ATDCLK
ATDCLK
High
Low
1
1
Table A-6
Symbol
N
V
T
N
f
T
ATDCLK
RH
CONV10
CONV10
CONV8
CONV8
t
V
I
V
REC
REF
RH
RL
-V
RL
in conjunction with the source resistance
V
V
Min
DDA
3.0
0.5
14
12
SSA
7
6
/2
Typ
3.3
DDA
<= 3.3 V +10%
Freescale Semiconductor
V
0.250
V
Max
DDA
3.6
2.0
28
14
26
13
20
DDA
/2
Cycles
Cycles
Unit
MHz
mA
µs
µs
µs
V
V
V
S