MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 79

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 48: Self Refresh Mode
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Command
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
High-Z
t CKS
t CMS
Precharge all
active banks
t AS
Single bank
PRECHARGE
All banks
Bank(s)
T0
t CKH
t CMH
t AH
t CK
Note:
1. Each AUTO REFRESH command performs a REFRESH cycle. Back-to-back commands are
t RP
T1
NOP
not required.
t CH
Enter self refresh mode
t CKS
t CL
REFRESH
AUTO
T2
CLK stable prior to exiting
self refresh mode
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
(Restart refresh time base)
Exit self refresh mode
Tn + 1
NOP
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t XSR
SELF REFRESH Operation
To + 1
©2008 Micron Technology, Inc. All rights reserved.
To + 2
REFRESH
AUTO
Don’t Care