MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 32

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

SELF REFRESH
DEEP POWER-DOWN
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
The SELF REFRESH command is used to place the device in self refresh mode. The self
refresh mode is used to retain data in the SDRAM while the rest of the system is pow-
ered down. When in self refresh mode, the device retains data without external clock-
ing. The SELF REFRESH command is initiated like an AUTO REFRESH command,
except that CKE is disabled (LOW). After the SELF REFRESH command is registered, the
inputs become “Don’t Care,” with the exception of CKE, which must remain LOW.
The DEEP POWER-DOWN (DPD) command is used to enter deep power-down mode,
achieving maximum power reduction by eliminating the power to the memory array.
To enter DPD, all banks must be idle. While CKE is LOW, hold CS# and WE# LOW, and
hold RAS# and CAS# HIGH at the rising edge of the clock. To exit DPD, assert CKE HIGH.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
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