MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 71

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 41: WRITE With Auto Precharge Interrupted by a READ
Figure 42: WRITE With Auto Precharge Interrupted by a WRITE
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Internal
States
Internal
States
Command
Command
Note:
Note:
Address
Address
Bank m
Bank m
Bank n
Bank n
CLK
CLK
DQ
DQ
1. DQM is LOW.
1. DQM is LOW.
Page active
Page active
NOP
T0
T0
NOP
WRITE - AP
WRITE - AP
Page active
Bank n,
Page active
Bank n,
Bank n
Bank n
Col a
T1
D
T1
Col a
D
IN
IN
WRITE with burst of 4
WRITE with burst of 4
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
T2
T2
NOP
D
NOP
D
IN
IN
71
READ - AP
Bank m,
T3
T3
Col d
Bank m
D
NOP
IN
Interrupt burst, write-back
t
WR - bank n
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
T4
D
NOP
CL = 3 (bank m)
t
Interrupt burst, write-back
WR - bank n
IN
WRITE with burst of 4
T5
T5
NOP
NOP
D
t
IN
Precharge
RP - bank n
PRECHARGE Operation
T6
T6
NOP
D
NOP
D
OUT
t RP - bank n
Precharge
IN
©2008 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
T7
T7
D
NOP
NOP
D
t WR - bank m
OUT
t RP - bank m
IN
Write-back