MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 74

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Command
Figure 45: Single WRITE With Auto Precharge
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 1.
Enable auto precharge
t CMS
t CL
t DS
Column m
Bank
WRITE
T2
D
t CMH
IN
t DH
t CH
T3
NOP
t WR
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
74
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
NOP
t RP
NOP
T6
PRECHARGE Operation
©2008 Micron Technology, Inc. All rights reserved.
ACTIVE
Bank
Row
Row
T7
NOP
T8
Don’t Care