MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 15

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Absolute Maximum Ratings
Table 4: Absolute Maximum Ratings
Table 5: DC Electrical Characteristics and Operating Conditions
Notes 1 and 2 apply to all parameters and conditions; V
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Voltage/Temperature
Voltage on V
Voltage on inputs, NC, or I/O balls relative to V
Storage temperature (plastic)
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; all inputs
Input low voltage: Logic 0; all inputs
Output high voltage
Output low voltage
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ are disabled; 0V ≤ V
Operating temperature:
DD
/V
IN
DDQ
≤ V
supply relative to V
Notes:
DD
Note:
(all other balls not under test = 0V)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. V
1. All voltages referenced to V
2. A full initialization sequence is required before proper device operation is ensured.
3. V
4. I
V
be greater than one-third of the cycle rate. V
width ≤ 3ns.
OUT
DD
DD
IH
overshoot: V
.
and V
= 4mA for full drive strength. Other drive strengths require appropriate scale.
SS
DDQ
SS
must be within 300mV of each other at all times. V
OUT
Industrial
Commercial
IH,max
≤ V
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
V
Symbol
DD
DD
DDQ
= V
T
/V
/V
V
STG
IN
DDQ
DDQ
DDQ
15
SS
1
+ 2V for a pulse width ≤ 3ns, and the pulse width cannot
= 1.7–1.95V
.
Symbol
V
V
V
V
V
V
I
DDQ
T
T
I
OZ
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
OH
OL
IH
L
A
A
IL
–0.35
–0.35
Min
–55
0.8 × V
0.9 × V
IL
undershoot: V
Min
–0.3
–1.0
–1.5
–40
–40
1.7
1.7
–
DDQ
DDQ
Electrical Specifications
V
DDQ
©2008 Micron Technology, Inc. All rights reserved.
Max
IL,min
Max
+150
1.95
1.95
+0.3
+2.8
+2.8
+85
+85
0.2
1.0
1.5
–
+ 0.3
DDQ
= –2V for a pulse
must not exceed
Unit
μA
μA
˚C
˚C
V
V
V
V
V
V
Unit
˚C
V
Notes
3
3
4
4