MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 39

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Command 1
Figure 12: Initialize and Load Mode Register
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
BA0, BA1
Address
DQM
CLK
CKE
A10
Power-up:
CLK stable
DQ
V
DD
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T = 100µs
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CKS
Notes:
NOP
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High-Z
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CKH
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CK
1. PRE = PRECHARGE command, AR = AUTO REFRESH command, LMR = LOAD MODE REGIS-
2. NOPs or DESELECTs must only be provided during
3. NOPs or DESELECTs must only be provided during
TER command.
Precharge
All banks
all banks
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PRE
T1
t AH
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Tn + 1
AR
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
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RFC
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To + 1
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2
Load mode
t AS t AH
t
AS
register
BA0 = L,
BA1 = L
Code
Code
Tp + 1
LMR
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RFC time.
MRD time.
AH
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MRD
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Load extended
mode register
3
©2008 Micron Technology, Inc. All rights reserved.
BA0 = L,
BA1 = H
Code
BA0 = L,
Code
BA1 = L
LMR
Tq + 1
t
Initialization
MRD
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Valid
Valid
Valid
Valid
Tr + 1
Don’t Care
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